Order this document
by CA2842C/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
. . . designed for amplifier applications in 50 to 100 ohm systems requiring wide
bandwidth, low noise and low distortion. This hybrid provides excellent gain
stability with temperature and linear amplification as a result of the push–pull
circuit design.
•
Specified Characteristics at V
= 24 V, T = 25°C:
CC C
22 dB
10–400 MHz
1.2 WATTS
Frequency Range — 10–400 MHz
Output Power — 1580 mW Typ @ 1 dB Compression, f = 200 MHz,
V
= 28 V
WIDEBAND
LINEAR AMPLIFIER
CC
Power Gain — 22 dB Typ @ f = 100 MHz
PEP — 650 mW Min @ –32 dB IMD
Noise Figure — 4 dB Typ @ f = 100 MHz
ITO — 46 dBm @ f = 300 MHz
•
•
All Gold Metallization for Improved Reliability
Unconditional Stability Under All Load Conditions
MAXIMUM RATINGS
Rating
Symbol
Value
28
Unit
Vdc
dBm
°C
DC Supply Voltage
RF Power Input
V
CC
P
+14
in
C
CASE 714F–03, STYLE 1
[CA (POS. SUPPLY)]
Operating Case Temperature Range
Storage Temperature Range
T
–20 to +100
–40 to +100
T
stg
°C
ELECTRICAL CHARACTERISTICS (T = 25°C, V
= 24 V, 50 Ω system unless otherwise noted)
C
CC
Characteristic
Frequency Range
Symbol
BW
Min
10
Typ
—
Max
400
±1
Unit
MHz
dB
Gain Flatness (f = 10–400 MHz)
Power Gain (f = 100 MHz)
—
—
±0.5
22
P
G
21
23
dB
Noise Figure, Broadband (f = 100 MHz)
NF
—
4
5
dB
Power Output — 1 dB Compression
P
P
1260
1580
—
mW
o1 dB
(f = 10–200 MHz, V
= 28 V)
Power Output — 1 dB Compression
CC
630
42
—
—
—
mW
o1 dB
(f = 200–400 MHz, V
= 28 V)
CC
Third Order Intercept
ITO
44
dBm
(See Figure 10, f = 10–400 MHz, See Fig. 10)
1
Input/Output VSWR (f = 10–400 MHz)
VSWR
—
—
1.3:1
—
1.5:1
–50
—
Second Harmonic Distortion
d
so
dB
(P = 100 mW, f
= 300 MHz)
Peak Envelope Power
o
2H
PEP
650
200
1000
230
—
mW
mA
(Two Tone Distortion Test — See Figure 10)
(f = 200 MHz @ –32 dB IMD)
Supply Current
I
250
CC
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
CA2842C
1