Order this document
by CA2832C/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
. . . designed for amplifier applications in 50 to 100 ohm systems requiring wide
bandwidth, low noise and low distortion. This hybrid provides excellent gain
stability with temperature and linear amplification as a result of the push–pull
circuit design.
•
Specified Characteristics at V
= 28 V, T = 25°C:
CC C
35.5 dB
1–200 MHz
Frequency Range — 1 to 200 MHz
Output Power — 1580 mW Typ @ 1 dB Compression, f = 200 MHz
Power Gain — 35.5 dB Typ @ f = 100 MHz
PEP — 900 mW Typ @ –32 dB IMD
1.6 WATT
WIDEBAND
LINEAR AMPLIFIER
Noise Figure — 5 dB Typ @ f = 200 MHz
ITO — 47 dBm @ f = 200 MHz
•
•
All Gold Metallization for Improved Reliability
Unconditional Stability Under All Load Conditions
MAXIMUM RATINGS
Rating
Symbol
Value
30
Unit
Vdc
dBm
°C
DC Supply Voltage
RF Power Input
V
CC
P
+5
in
C
CASE 714F–03, STYLE 1
[CA (POS. SUPPLY)]
Operating Case Temperature Range
Storage Temperature Range
T
–20 to +90
–40 to +100
T
stg
°C
ELECTRICAL CHARACTERISTICS (T = 25°C, V
= 28 V, 50 Ω system unless otherwise noted)
C
CC
Characteristic
Frequency Range
Symbol
BW
Min
1
Typ
—
Max
200
±1
Unit
MHz
dB
Gain Flatness (f = 1–200 MHz)
—
—
±0.5
35.5
5
Power Gain (f = 100 MHz)
P
G
34
—
37
dB
Noise Figure, Broadband (f = 200 MHz)
Power Output — 1 dB Compression (f = 1–200 MHz)
Power Output — 1 dB Compression (f = 150 MHz)
NF
6
dB
P
P
1260
—
1580
2000
47
—
mW
mW
dBm
—
o 1dB
—
o 1dB
ITO
Third Order Intercept (See Figure 10, f = 200 MHz)
1
45
—
—
Input/Output VSWR (f = 1–200 MHz)
VSWR
1.5:1
–70
900
2:1
–60
—
Second Harmonic Distortion (P = 100 mW, f
2H
= 150 MHz)
d
so
—
dB
o
Peak Envelope Power (Two Tone Distortion Test — See Figure 10)
(f = 1–200 MHz @ –32 dB IMD)
PEP
—
mW
Supply Current
I
400
435
470
mA
CC
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
CA2832C
1