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by CA2810C/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
. . . designed for amplifier applications in 50 ohm systems requiring wide
bandwidth, low noise and low distortion. This hybrid provides excellent gain
stability with temperature and linear amplification as a result of the push–pull
circuit design.
•
•
Specified Characteristics at V = 24 V, T = 25°C:
CC C
Frequency Range — 10 to 450 MHz
34 dB
10–450 MHz
800 mWATT
Output Power — 1 W Typ @ 1 dB Compression, f = 200 MHz
Power Gain — 34 dB Typ @ f = 50 MHz
PEP — 400 mW Typ @ –32 dB IMD
WIDEBAND
LINEAR AMPLIFIER
Noise Figure — 5 dB Max @ f = 300 MHz
•
All Gold Metallization for Improved Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
28
Unit
Vdc
dBm
°C
DC Supply Voltage
V
CC
RF Power Input
P
+5
in
C
CASE 714F–03, STYLE 1
[CA (POS. SUPPLY)]
Operating Case Temperature Range
Storage Temperature Range
T
–20 to +100
–40 to +100
T
stg
°C
ELECTRICAL CHARACTERISTICS (T = 25°C, V
= 24 V, 50 Ω system unless otherwise noted)
C
CC
Characteristic
Frequency Range
Symbol
Min
10
—
Typ
—
Max
450
±1.5
35
Unit
MHz
dB
BW
Gain Flatness (f = 10–450 MHz)
Power Gain (f = 50 MHz)
F
L
—
P
G
33
—
34
dB
Noise Figure, Boradband (f = 300 MHz)
Power Output — 1 dB Compression (f = 200 MHz)
NF
—
5
dB
P
o1 dB
800
—
1000
43
—
mW
dBm
—
Third Order Intercept (See Figure 10, f = 300 MHz)
1
ITO
—
Input/Output VSWR (f = 10–450 MHz)
VSWR
—
—
2:1
–45
Second Harmonic Distortion
d
so
—
–55
dB
(P = 100 mW, f
o 2H
= 10–300 MHz)
Reverse Isolation (f = 10–450 MHz)
—
—
—
40
—
—
dB
Peak Envelope Power
PEP
400
mW
(Two Tone Distortion Test — See Figure 10)
(f = 10–450 MHz @ –32 dB IMD)
Supply Current
I
270
310
330
mA
CC
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
CA2810C
1