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2N6344-AK PDF预览

2N6344-AK

更新时间: 2024-01-03 19:37:37
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 触发装置可控硅三端双向交流开关
页数 文件大小 规格书
6页 117K
描述
600V, 8A, TRIAC, TO-220AB

2N6344-AK 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.7
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:TRIACBase Number Matches:1

2N6344-AK 数据手册

 浏览型号2N6344-AK的Datasheet PDF文件第2页浏览型号2N6344-AK的Datasheet PDF文件第3页浏览型号2N6344-AK的Datasheet PDF文件第4页浏览型号2N6344-AK的Datasheet PDF文件第5页浏览型号2N6344-AK的Datasheet PDF文件第6页 
Order this document  
by 2N6342/D  
SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Triode Thyristors  
. . . designed primarily for full-wave ac control applications, such as light dimmers,  
motor controls, heating controls and power supplies; or wherever full-wave silicon  
gate controlled solid-state devices are needed. Triac type thyristors switch from a  
blocking to a conducting state for either polarity of applied anode voltage with positive  
or negative gate triggering.  
TRIACs  
8 AMPERES RMS  
200 thru 800 VOLTS  
Blocking Voltage to 800 Volts  
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity  
and Stability  
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
Gate Triggering Guaranteed in Two Modes (2N6342, 2N6343, 2N6344, 2N6345)  
or Four Modes (2N6346, 2N6347, 2N6348, 2N6349)  
For 400 Hz Operation, Consult Factory  
MT1  
12 Ampere Devices Available as 2N6342A thru 2N6349A  
MT2  
G
CASE 221A-04  
(TO-220AB)  
STYLE 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
*Peak Repetitive Off-State Voltage  
V
DRM  
Volts  
(Gate Open, T = –40 to +110°C)  
J
1/2 Sine Wave 50 to 60 Hz, Gate Open  
2N6342, 2N6346  
2N6343, 2N6347  
2N6344, 2N6348  
2N6345, 2N6349  
200  
400  
600  
800  
*RMS On-State Current  
Full Cycle Sine Wave 50 to 60 Hz  
(T = +80°C)  
(T = +90°C)  
C
I
8
4
Amps  
Amps  
C
T(RMS)  
*Peak Non-repetitive Surge Current  
(One Full Cycle, 60 Hz, T = +80°C)  
Preceded and followed by Rated Current  
I
100  
TSM  
C
2
I t  
2
A s  
Circuit Fusing  
(t = 8.3 ms)  
40  
*Peak Gate Power (T = +80°C, Pulse Width = 2 µs)  
P
20  
0.5  
2
Watts  
Watt  
Amps  
Volts  
°C  
C
GM  
*Average Gate Power (T = +80°C, t = 8.3 ms)  
P
G(AV)  
C
*Peak Gate Current  
I
GM  
*Peak Gate Voltage  
V
GM  
10  
*Operating Junction Temperature Range  
*Storage Temperature Range  
T
–40 to +125  
–40 to +150  
J
T
°C  
stg  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
REV 1  
Motorola, Inc. 1995  

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