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2N6343-AU PDF预览

2N6343-AU

更新时间: 2024-02-21 12:19:40
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 栅极触发装置可控硅三端双向交流开关
页数 文件大小 规格书
6页 117K
描述
400V, 8A, TRIAC, TO-220AB

2N6343-AU 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.72外壳连接:MAIN TERMINAL 2
配置:SINGLE最大直流栅极触发电流:50 mA
最大直流栅极触发电压:2 V最大维持电流:40 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大均方根通态电流:8 A重复峰值关态漏电流最大值:10 µA
断态重复峰值电压:400 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:TRIACBase Number Matches:1

2N6343-AU 数据手册

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Order this document  
by 2N6342/D  
SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Triode Thyristors  
. . . designed primarily for full-wave ac control applications, such as light dimmers,  
motor controls, heating controls and power supplies; or wherever full-wave silicon  
gate controlled solid-state devices are needed. Triac type thyristors switch from a  
blocking to a conducting state for either polarity of applied anode voltage with positive  
or negative gate triggering.  
TRIACs  
8 AMPERES RMS  
200 thru 800 VOLTS  
Blocking Voltage to 800 Volts  
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity  
and Stability  
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
Gate Triggering Guaranteed in Two Modes (2N6342, 2N6343, 2N6344, 2N6345)  
or Four Modes (2N6346, 2N6347, 2N6348, 2N6349)  
For 400 Hz Operation, Consult Factory  
MT1  
12 Ampere Devices Available as 2N6342A thru 2N6349A  
MT2  
G
CASE 221A-04  
(TO-220AB)  
STYLE 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
*Peak Repetitive Off-State Voltage  
V
DRM  
Volts  
(Gate Open, T = –40 to +110°C)  
J
1/2 Sine Wave 50 to 60 Hz, Gate Open  
2N6342, 2N6346  
2N6343, 2N6347  
2N6344, 2N6348  
2N6345, 2N6349  
200  
400  
600  
800  
*RMS On-State Current  
Full Cycle Sine Wave 50 to 60 Hz  
(T = +80°C)  
(T = +90°C)  
C
I
8
4
Amps  
Amps  
C
T(RMS)  
*Peak Non-repetitive Surge Current  
(One Full Cycle, 60 Hz, T = +80°C)  
Preceded and followed by Rated Current  
I
100  
TSM  
C
2
I t  
2
A s  
Circuit Fusing  
(t = 8.3 ms)  
40  
*Peak Gate Power (T = +80°C, Pulse Width = 2 µs)  
P
20  
0.5  
2
Watts  
Watt  
Amps  
Volts  
°C  
C
GM  
*Average Gate Power (T = +80°C, t = 8.3 ms)  
P
G(AV)  
C
*Peak Gate Current  
I
GM  
*Peak Gate Voltage  
V
GM  
10  
*Operating Junction Temperature Range  
*Storage Temperature Range  
T
–40 to +125  
–40 to +150  
J
T
°C  
stg  
1. V  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
REV 1  
Motorola, Inc. 1995  

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