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2N5460RLRM PDF预览

2N5460RLRM

更新时间: 2024-02-14 01:37:23
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
4页 120K
描述
P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92

2N5460RLRM 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknown风险等级:5.56
Is Samacsys:N配置:SINGLE
FET 技术:JUNCTION最大反馈电容 (Crss):3 pF
JEDEC-95代码:TO-226AAJESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管元件材料:SILICON
Base Number Matches:1

2N5460RLRM 数据手册

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Order this document  
by 2N5460/D  
SEMICONDUCTOR TECHNICAL DATA  
P–Channel — Depletion  
2 DRAIN  
3
GATE  
1 SOURCE  
MAXIMUM RATINGS  
Rating  
DrainGate Voltage  
Symbol  
Value  
Unit  
V
DG  
40  
40  
10  
Vdc  
Vdc  
Reverse GateSource Voltage  
Forward Gate Current  
V
I
GSR  
1
mAdc  
G(f)  
2
3
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
350  
2.8  
mW  
mW/°C  
A
D
CASE 29–04, STYLE 7  
TO–92 (TO–226AA)  
Junction Temperature Range  
Storage Channel Temperature Range  
T
65 to +135  
65 to +150  
°C  
°C  
J
T
stg  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
GateSource Breakdown Voltage  
V
40  
Vdc  
(BR)GSS  
(I = 10 µAdc, V  
= 0)  
2N5460, 2N5461, 2N5462  
G
DS  
Gate Reverse Current  
I
GSS  
(V  
GS  
(V  
GS  
(V  
GS  
(V  
GS  
= 20 Vdc, V  
= 30 Vdc, V  
= 20 Vdc, V  
= 30 Vdc, V  
= 0)  
2N5460, 2N5461, 2N5462  
2N5460, 2N5461, 2N5462  
5.0  
1.0  
nAdc  
DS  
DS  
DS  
DS  
= 0)  
= 0, T = 100°C)  
= 0, T = 100°C)  
µAdc  
A
A
GateSource Cutoff Voltage  
(V = 15 Vdc, I = 1.0 µAdc)  
2N5460  
2N5461  
2N5462  
V
0.75  
1.0  
1.8  
6.0  
7.5  
9.0  
Vdc  
Vdc  
GS(off)  
DS  
D
GateSource Voltage  
V
GS  
(V  
DS  
(V  
DS  
(V  
DS  
= 15 Vdc, I = 0.1 mAdc)  
2N5460  
2N5461  
2N5462  
0.5  
0.8  
1.5  
4.0  
4.5  
6.0  
D
= 15 Vdc, I = 0.2 mAdc)  
D
= 15 Vdc, I = 0.4 mAdc)  
D
ON CHARACTERISTICS  
ZeroGateVoltage Drain Current  
2N5460  
2N5461  
2N5462  
I
1.0  
2.0  
4.0  
5.0  
9.0  
16  
mAdc  
mhos  
DSS  
(V  
DS  
= 15 Vdc, V  
= 0, f = 1.0 kHz)  
GS  
SMALLSIGNAL CHARACTERISTICS  
Forward Transfer Admittance  
2N5460  
2N5461  
2N5462  
y
1000  
1500  
2000  
4000  
5000  
6000  
fs  
(V  
DS  
= 15 Vdc, V  
= 0, f = 1.0 kHz)  
GS  
Output Admittance (V  
= 15 Vdc, V  
= 0, f = 1.0 kHz)  
y
75  
7.0  
2.0  
mhos  
pF  
DS  
GS  
os  
Input Capacitance (V  
= 15 Vdc, V  
= 0, f = 1.0 MHz)  
= 0, f = 1.0 MHz)  
C
5.0  
1.0  
DS  
GS  
iss  
rss  
Reverse Transfer Capacitance (V  
= 15 Vdc, V  
C
pF  
DS  
GS  
FUNCTIONAL CHARACTERISTICS  
Noise Figure  
NF  
1.0  
60  
2.5  
dB  
(V  
DS  
= 15 Vdc, V  
= 0, R = 1.0 Megohm, f = 100 Hz, BW = 1.0 Hz)  
GS G  
Equivalent Short–Circuit Input Noise Voltage  
(V = 15 Vdc, V = 0, f = 100 Hz, BW = 1.0 Hz)  
e
n
115  
nV Hz  
DS  
GS  
Motorola, Inc. 1997  

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