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MOCD211M PDF预览

MOCD211M

更新时间: 2024-11-28 15:43:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 502K
描述
Transistor Output Optocoupler, 2-Element, 2500V Isolation, LEAD FREE, PLASTIC, SOIC-8

MOCD211M 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:LEAD FREE, PLASTIC, SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.40.80.00风险等级:4.5
其他特性:UL APPROVEDColl-Emtr Bkdn Voltage-Min:30 V
配置:SEPARATE, 2 CHANNELS当前传输比率-最小值:20%
标称电流传输比:20%最大暗电源:50 nA
最大正向电流:0.06 A最大正向电压:1.5 V
最大绝缘电压:2500 VJESD-609代码:e3
安装特点:SURFACE MOUNT元件数量:2
最大通态电流:0.15 A最高工作温度:100 °C
最低工作温度:-40 °C光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER
最大功率耗散:0.25 W子类别:Optocoupler - Transistor Outputs
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

MOCD211M 数据手册

 浏览型号MOCD211M的Datasheet PDF文件第2页浏览型号MOCD211M的Datasheet PDF文件第3页浏览型号MOCD211M的Datasheet PDF文件第4页浏览型号MOCD211M的Datasheet PDF文件第5页浏览型号MOCD211M的Datasheet PDF文件第6页浏览型号MOCD211M的Datasheet PDF文件第7页 
DUAL CHANNEL PHOTOTRANSISTOR  
SMALL OUTLINE SURFACE MOUNT  
OPTOCOUPLERS  
MOCD211-M  
DESCRIPTION  
The MOCD211-M device consists of two gallium arsenide infrared emitting diodes optically coupled to  
two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It  
is ideally suited for high density applications and eliminates the need for through-the-board mounting.  
FEATURES  
• U.L. Recognized (File #E90700, Volume 2)  
• VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD211V-M)  
• Minimum BV  
of 30 Volts Guaranteed  
CEO  
• Standard SOIC-8 Footprint, with 0.050" Lead Spacing  
ANODE 1  
1
8
COLLECTOR 1  
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering  
• High Input-Output Isolation of 2500 V  
• Compact Dual Channel Optocoupler  
Guaranteed  
AC(rms)  
CATHODE 1  
ANODE 2  
2
3
7
6
5
EMITTER 1  
COLLECTOR 2  
EMITTER 2  
APPLICATIONS  
• Interfacing and coupling systems of different potentials and impedances  
• General purpose switching circuits  
CATHODE 2  
4
• Monitor and detection circuits  
ABSOLUTE MAXIMUM RATINGS (T = 25°C Unless otherwise specified)  
A
Rating  
Symbol  
Value  
Unit  
EMITTER  
Forward Current - Continuous  
Forward Current - Peak (PW = 100 µs, 120 pps)  
Reverse Voltage  
I
60  
1.0  
6.0  
90  
mA  
A
F
I (pk)  
F
V
V
R
LED Power Dissipation @ T = 25°C  
mW  
A
P
D
Derate above 25°C  
DETECTOR  
0.8  
mW/°C  
Collector-Emitter Voltage  
Emitter-Collector Voltage  
Collector Current-Continuous  
V
30  
7.0  
V
V
CEO  
V
ECO  
I
150  
150  
1.76  
mA  
C
Detector Power Dissipation @ T = 25°C  
mW  
mW/°C  
A
P
D
Derate above 25°C  
TOTAL DEVICE  
(1,2,3)  
Input-Output Isolation Voltage  
V
2500  
Vac(rms)  
ISO  
(f = 60 Hz, 1 min. Duration)  
Total Device Power Dissipation @ T = 25°C  
250  
mW  
mW/°C  
°C  
A
P
D
Derate above 25°C  
2.94  
Ambient Operating Temperature Range  
Storage Temperature Range  
T
-40 to +100  
-40 to +125  
A
T
°C  
stg  
© 2003 Fairchild Semiconductor Corporation  
Page 1 of 8  
5/28/03  

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