Datasheet > MNP0008-T55P

MNP0008-T55P

更新时间： 2024-11-28 14:51:23

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MACOM		/
页数	文件大小	规格书
4页	557K
描述
Silicon PIN Diode: NIP

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MNP0008-T55P 数据手册

MNP0008

Silicon NIP Diode

Rev. V3

Features



Rugged Construction

Fully Passivated

Low Leakage

Available in Both Chip and Package Styles

Screening per MIL-PRF-19500 and MIL-PRF-

38534 Available

Description

The MNP0008 Series are silicon NIP diodes that

features a fully passivated mesa construction for low

leakage and reliability.

Electrical Specifications: T_C= +25°C

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Voltage Breakdown

I_R= 10 µA

100

—

Junction Capacitance

DIE Package (C12p)

V_R= 10 V, 1 MHz

—

0.08

0.12

Total Capacitance

Package Style:

ET47p

0.48

0.28

0.21

0.33

0.60

0.37

0.29

0.43

V_R= 10 V, 1 MHz

—

T54p

T55p

T89p

Series Resistance

Lifetime

I_F= 10 mA, 500 MHz

I_F= 10 mA, I_R= 6 mA, 50%

—

2.0

150

2.5

—

I Layer

µm

—

Absolute Maximum Ratings^1,2

Parameter

Reverse Voltage

Absolute Maximum

100 V

Thermal Resistance

+50°C/W

Operating & Storage Temperature

-65°C to +150°C

1. Exceeding any one or combination of these limits may cause permanent damage to this device.

2. MACOM does not recommend sustained operation near these survivability limits.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0014084

12 3 4

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