Datasheet > MNM201

MNM201

更新时间： 2024-11-28 14:52:03

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描述
Schottky Mixer Diodes Medium Barrier

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MNM201 数据手册

MNM2xx Series

Schottky Mixer Diodes

Medium Barrier

Rev. V1

Features



Multi Junction Chip Design

Low Noise

Small Junction Capacitance

Description

The MNM2xx Series of medium barrier Schottky

diodes are metal semiconductor junction devices

that have a typical short reverse recovery time. This

allows their use at high microwave frequencies when

the performance of the n-type may be reduced. The

forward I-V of Schottky diodes is determined by the

junction metal used. For every different metal

selection there is a different forward voltage

characteristic or “Barrier Height”. The devices are

best suited for applications through 26 GHz and are

ideally suited for use in mixers, detectors, doublers,

and modulators.

Consult Factory for other package styles.

Static Sensitivity

These electronic devices are sensitive to

electrostatic discharge (ESD) and can be damaged

by static electricity. Proper ESD control techniques

should be used when handling these devices.

Electrical Characteristics^1,2: T_A= +25°C

Breakdown

Voltage

@ 10 µA

Forward

Voltage

@ 1 mA

Junction

Capacitance

@ 0 V, 1 MHz

Series

Resistance

@ 5 mA

Tangential

Signal

Sensitivity

Model

(V_BR

)

(V_F)

(C_J)

(R_S)

(T_SS

)

Min.

Max.

Typ.

0.14

0.20

0.12

0.14

0.15

0.12

0.14

0.15

0.12

0.25

0.21

0.15

0.12

0.15

Typ.

MNM200

MNM201

MNM202

MNM203

MNM204

MNM205

MNM206

MNM207

MNM208

MNM209

MNM210

MNM211

MNM212

MNM213

MNM214

MNM215

0.40

0.425

0.450

0.475

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0018475

12 3

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