Datasheet > MMZ09312B

MMZ09312B

更新时间： 2024-04-09 19:02:16

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
28页	1349K
描述
InGaP HBT Linear Amplifier, 400-1000 MHz, 31.7 dB, 29.6 dBm

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MMZ09312B 数据手册

Document Number: MMZ09312B

Rev. 2, 12/2014

Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

MMZ09312BT1

High Efficiency/Linearity Amplifier

The MMZ09312B is a 2--stage high efficiency, Class AB InGaP HBT

amplifier designed for use as a linear driver amplifier in wireless base station

applications as well as an output stage in femtocell or repeater applications. It

is suitable for applications with frequencies from 400 to 1000 MHz such as

CDMA, GSM, LTE and ZigBee^Rat operating voltages from 3 to 5 Volts.

400--1000 MHz, 31.7 dB

29.6 dBm

InGaP HBT LINEAR AMPLIFIER



Typical Performance: V_CC1= V_CC2= V_BIAS= 5 Vdc, I_CQ= 74 mA

ACPR

(dBc)

PAE

(%)

out

Frequency

900 MHz

750 MHz

450 MHz

(dBm)

(dB)

31.5

32.0

33.0

Test Signal

IS--95 CDMA

--50.0

--40.0

26.0

10.8

9.0

18.0

17.0

17.5

1C W--CDMA TM1

10 MHz LTE TM1.1

LTE 10/20 MHz

ZigBee

QFN 3  3

15.3

57.0

Features



Frequency: 400--1000 MHz

P1dB: 29.6 dBm @ 900 MHz

Power Gain: 31.7 dB @ 900 MHz

OIP3: 42 dBm @ 900 MHz

Active Bias Control (adjustable externally)

Single 3 to 5 V Supply

Performs Well with Digital Predistortion Systems

Single--ended Power Detector

Cost--effective 12--pin, 3 mm QFN Surface Mount Package

In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Rating

Supply Voltage

Symbol

Value

Unit

450

MHz

900

MHz

Characteristic

Symbol

Unit

550

Small--Signal Gain (S21)

Input Return Loss (S11)

Output Return Loss (S22)

33.8

-- 2 2

-- 2 5

28.8

31.7

-- 1 5

-- 1 8

29.6

Supply Current

dBm

C

IRL

ORL

P1dB

RF Input Power

Storage Temperature Range

Junction Temperature

stg

--65 to +150

175

Power Output @ 1dB

Compression

dBm

C

1. V

= V

= 5 Vdc, T = 25C, 50 ohm system, CW

BIAS A

CC1

CC2

Application Circuit

Table 3. Thermal Characteristics

(2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case



C/W

Case Temperature 84C, V = V

= V

= 5 Vdc

BIAS

CC1

CC2

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMZ09312BT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...28

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