Datasheet > MMX02P023U

MMX02P023U

更新时间： 2024-09-29 14:54:11

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
6页	507K
描述
小信号金氧半電晶體

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中文翻译

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数据手册

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MMX02P023U 数据手册

MMX02P023U

P-Channel Enhancement Mode MOSFET

Features

• Low On-Resistance

• Low Input Capacitance

• Low Miller Charge

6 S

5 S

4 D

S 1

S 2

G 3

1. Sourse 2. Sourse 3. Gate

4. Drain 5. Sourse 6. Sourse

DFN2020-6HMB Plastic Package

Applications

• Load Switch

• Motor / Body Load Control

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation ¹⁾

-V_DS

V_GS

-I_D

± 8

9.6

tp = 10 µs

-I_DM

P_D

0.75

℃

Operating Junction and Storage Temperature Range

T_j,T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

4.5

Unit

Thermal Resistance - Junction to Case

℃

Thermal Resistance - Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

Steady State

R_θJA

166

1 / 6

Dated: 30/12/2021 Rev: 03

12 3 4 5 6

中文翻译

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