Datasheet > MMVL809T1

MMVL809T1

更新时间： 2024-01-14 01:03:32

品牌	Logo	应用领域
乐山 - LRC		二极管
页数	文件大小	规格书
2页	41K
描述
Silicon Tuning Diode

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中文翻译

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技术参数
数据手册

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MMVL809T1 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.75
标称二极管电容：	5.3 pF	二极管类型：	VARIABLE CAPACITANCE DIODE
最小质量因数：	75	最大重复峰值反向电压：	20 V
子类别：	Varactors	表面贴装：	YES
Base Number Matches：	1

MMVL809T1 数据手册

LESHAN RADIO COMPANY, LTD.

Silicon Tuning Diode

MMVL809T1

This device is designed for 900 MHz frequency control and tuning

applications. It provides solid–state reliability in replacement of mechanical

tuning methods.

4.5 – 6.1 pF

VOLTAGE VARIABLE

CAPACITANCE DIODE

• Controlled and Uniform Tuning Ratio

• Surface Mount Package

• Available in 8 mm Tape and Reel

• Device Marking: 5K

PLASTIC, CASE 477

SOD– 323

CATHODE

ANODE

ORDERING INFORMATION

Device

Package

Shipping

MMVL809T1

SOD–323

3000 / Tape & Reel

MAXIMUMRATINGS

Symbol

Rating

Value

Unit

V_R

I_F

Continuous Reverse Voltage

Peak Forward Current

Vdc

mAdc

THERMALCHARACTERISTICS

Symbol

Characteristic

Total Device Dissipation FR–5 Board,*

Max

Unit

P_D

200

T_A= 25°C

Derate above 25°C

1.57

635

150

mW/°C

°C/W

°C

R_θJA

T_J,T_stg

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

*FR–4 Minimum Pad

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

Characteristic

Reverse BreakdownVoltage

(I_R= 10 µAdc)

Symbol

Min

Typ

Max

Unit

V_(BR)R

—

Vdc

Reverse Voltage Leakage Current

(V_R= 15 Vdc)

I_R

—

nAdc

C_t, Diode Capacitance

Q, Figure of Merit

V_R= 3.0 Vdc

f = 500 MHz

Min

C_R, Capacitance Ratio

C₃/C₈

V_R= 2.0 Vdc, f = 1.0 MHz

f = 1.0 MHz(1)

Device

Min

Nom

Max

Min

Max

MMVL809T1

4.5

5.3

6.1

1.8

2.6

1. C_Ris the ratio of C_tmeasured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.

MMVL809T1–1/2

中文翻译

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