Datasheet > MMVL3700T1

MMVL3700T1

更新时间： 2024-11-28 22:30:03

品牌	Logo	应用领域
乐山 - LRC		二极管测试高压
页数	文件大小	规格书
2页	77K
描述
High Voltage Silicon Pin Diode

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中文翻译

获取价格

技术参数
数据手册

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MMVL3700T1 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.77	Is Samacsys：	N
最小击穿电压：	200 V	最大二极管正向电阻：	1 Ω
二极管电阻测试电流：	10 mA	二极管电阻测试频率：	100 MHz
二极管类型：	PIN DIODE	最高工作温度：	150 °C
子类别：	PIN Diodes	表面贴装：	YES
Base Number Matches：	1

MMVL3700T1 数据手册

LESHAN RADIO COMPANY, LTD.

High Voltage Silicon Pin

Diode

These devices are designed primarily for VHF band switching applications but

are also suitable for use in general–purpose switching circuits. They are supplied

in a cost–effective plastic surface mount package for economical, high–volume

consumer and industrial requirements.

MMVL3700T1

SILICONPIN

SWITCHINGDIODE

• Long Reverse Recovery Time trr = 300 ns (Typ)

• Rugged PIN Structure Coupled with Wirebond

Construction for Optimum Reliability

• Low Series Resistance @ 100 MHz –

R_S= 0.7 Ω (Typ) @ I_F= 10 mAdc

PLASTIC, CASE 477

SOD– 323

• Reverse Breakdown Voltage = 200 V (Min)

• Device Marking: 4R

CATHODE

ANODE

ORDERING INFORMATION

Device

Package

Shipping

MMVL3700T1

SOD–323

3000 / Tape & Reel

MAXIMUMRATINGS

Symbol

Rating

Value

200

Unit

Vdc

V_R

I_F

Continuous Reverse Voltage

Peak Forward Current

mAdc

THERMALCHARACTERISTICS

Symbol

Characteristic

Max

Unit

P_D

Total Device Dissipation FR–5 Board,*

T_A= 25°C

200

Derate above 25°C

1.57

635

150

mW/°C

°C/W

°C

R_θJA

T_J,T_stg

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

*FR–4 Minimum Pad

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

Characteristic

Reverse BreakdownVoltage

(I_R= 10 µAdc)

Symbol

Min

Typ

Max

Unit

V_(BR)R

200

—

1.0

0.1

—

Vdc

Diode Capacitance

(V_R= 20 Vdc, f = 1.0 MHz)

Series Resistance

C_T

R_S

I_R

t_rr

—

0.7

—

Ω

(I_F= 10 mAdc)

Reverse Leakage Current

(V_R= 150 Vdc)

µAdc

Reverse Recovery Time

(I_F= I_R= 10 mAdc)

300

MMVL3700T1–1/2

中文翻译

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