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MMUN2232RLT1 PDF预览

MMUN2232RLT1

更新时间： 2024-01-31 07:01:15
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
8页 289K
描述
Bias Resistor Transistor

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中文翻译

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MMUN2232RLT1 技术参数

生命周期：Contact Manufacturer包装说明：,
Reach Compliance Code：unknown风险等级：5.8
最大集电极电流 (IC)：0.1 A最小直流电流增益 (hFE)：15
元件数量：1极性/信道类型：NPN
最大功率耗散 (Abs)：0.2 W子类别：BIP General Purpose Small Signal
表面贴装：YES晶体管元件材料：SILICON
Base Number Matches：1

MMUN2232RLT1 数据手册

 浏览型号MMUN2232RLT1的Datasheet PDF文件第2页浏览型号MMUN2232RLT1的Datasheet PDF文件第3页浏览型号MMUN2232RLT1的Datasheet PDF文件第4页浏览型号MMUN2232RLT1的Datasheet PDF文件第5页浏览型号MMUN2232RLT1的Datasheet PDF文件第6页浏览型号MMUN2232RLT1的Datasheet PDF文件第7页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistor  
PNP Silicon Surface Mount Transistor with  
MMUN2211RLT1  
MMUN2212RLT1  
MMUN2213RLT1  
MMUN2214RLT1  
MMUN2215RLT1  
MMUN2230RLT1  
MMUN2231RLT1  
MMUN2232RLT1  
MMUN2233RL34  
Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single device and its  
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single  
transistor with a monolithic bias network consisting of two resistors; a series base  
resistor and a base-emitter resistor.The BRT eliminates these individual components  
by integrating them into a single device. The use of a BRT can reduce both system  
cost and board space. The device is housed in the SOT-23 package which is  
designed for low power surface mount applications.  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
The SOT-23 package can be soldered using wave or  
reflow. The modified gull-winged leads absorb thermal  
stress during soldering eliminating the possibility of  
damage to the die.  
Available in 8 mm embossed tape and reel. Use the  
Device Number to order the 7 inch/3000 unit reel.  
NPN SILICON  
BIAS RESISTOR  
TRANSISTOR  
Replace “T1” with “T3” in the Device Number to order  
the 13 inch/10,000 unit reel.  
PIN3  
3
Collector  
PIN1  
base  
R1  
(output)  
(Input)  
R2  
1
PIN2  
2
Emitter  
(Ground)  
CASE 318–08, STYLE 6  
SOT– 23 (TO–236AB)  
MAXIMUM RATINGS (T A = 25°C unless otherwise noted)  
Rating  
Symbol  
VCBO  
V CEO  
IC  
Value  
50  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
50  
Vdc  
Collector Current  
Total Power Dissipation @ T A = 25°C (1)  
100  
200  
1.6  
mAdc  
mW  
P D  
Derate above 25°C  
mW/°C  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
RθJA  
Value  
Unit  
Thermal Resistance — Junction-to-Ambient (surface mounted)  
Operating and Storage Temperature Range  
Maximum Temperature for Soldering Purposes  
Time in Solder Bath  
625  
°C/W  
TJ , Tstg  
–65 to +150  
°C  
°C  
260  
10  
T L  
Sec  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
MMUN2211RLT1  
A8A  
10  
10  
MMUN2212RLT1  
MMUN2213RLT1  
MMUN2214RLT1  
MMUN2215RLT1(2)  
MMUN2216RLT1(2)  
MMUN2230RLT1(2)  
MMUN2231RLT1(2)  
MMUN2232RLT1(2)  
MMUN2233RLT1(2)  
MMUN2234RLT1(2)  
A8B  
A8C  
A8D  
A8E  
A8F  
A8G  
A8H  
A8J  
A8K  
A8L  
22  
47  
10  
10  
4.7  
1
22  
47  
47  
1
2.2  
4.7  
4.7  
22  
2.2  
4.7  
47  
47  
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.  
2. New devices. Updated curves to follow in subsequent data sheets.  
Q2–1/8  
12345678

中文翻译

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