Datasheet > MMUN2217L_16

MMUN2217L_16

更新时间： 2024-01-05 16:08:13

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描述
Digital Transistors (BRT)

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获取价格

数据手册

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MMUN2217L_16 数据手册

MMUN2217L,

NSVMMUN2217L

Digital Transistors (BRT)

R1 = 4.7 kW, R2 = 10 kW

NPN Transistors with Monolithic Bias

Resistor Network

www.onsemi.com

PIN CONNECTIONS

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base−emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

PIN 3

COLLECTOR

(OUTPUT)

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

MARKING DIAGRAM

SOT−23

CASE 318

STYLE 6

AAM MG

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

AAM

Specific Device Code

Date Code*

Pb−Free Package

MAXIMUM RATINGS (T = 25°C)

(Note: Microdot may be in either location)

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

Symbol

Max

Unit

Vdc

*Date Code orientation may vary depending up-

on manufacturing location.

CBO

CEO

Vdc

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

100

mAdc

Vdc

IN(fwd)

Input Reverse Voltage

IN(rev)

Vdc

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

October, 2016 − Rev. 3

DTC143X/D

12 3 4 5

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