Datasheet > MMUN2216LT1G

MMUN2216LT1G

更新时间： 2024-01-18 05:54:44

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
12页	100K
描述
Bias Resistor Transistor

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MMUN2216LT1G 数据手册

MMUN2211LT1 Series

Preferred Devices

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the

SOT-23 package which is designed for low power surface mount

applications.

http://onsemi.com

PIN 3

COLLECTOR

(OUTPUT)

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

Features

• Simplifies Circuit Design

• Reduces Board Space and Component Count

• Pb−Free Packages are Available

MARKING DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

A8x M G

SOT−23

CASE 318

STYLE 6

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

CBO

CEO

Vdc

A8x = Specific Device Code

100

mAdc

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

246 (Note 1)

400 (Note 2)

1.5 (Note 1)

2.0 (Note 2)

T = 25°C

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 11 of this data sheet.

Derate above 25°C

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Lead

508 (Note 1)

311 (Note 2)

Preferred devices are recommended choices for future use

and best overall value.

174 (Note 1)

208 (Note 2)

°C/W

°C

Junction and Storage Temperature

Range

T , T

−55 to +150

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−4 @ minimum pad

2. FR−4 @ 1.0 x 1.0 inch pad

Publication Order Number:

August, 2005 − Rev. 7

MMUN2211LT1/D

12 3 4 5 6 7...12

中文翻译

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MMUN2216LT1G 替代型号

型号	品牌	替代类型	描述	数据表
MMUN2216LT1	ONSEMI	类似代替	Bias Resistor Transistor
PDTC143TT,215	NXP	功能相似	PDTC143T series - NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open TO-236 3-Pin
DTC143TKAT146	ROHM	功能相似	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-59,

与MMUN2216LT1G相关器件

型号	品牌	获取价格	描述	数据表
MMUN2216LT3	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236A
MMUN2217L	ONSEMI	获取价格	Digital Transistors (BRT)
MMUN2217L_16	ONSEMI	获取价格	Digital Transistors (BRT)
MMUN2217LT1G	ONSEMI	获取价格	Digital Transistors (BRT)
MMUN2218LT1G	ONSEMI	获取价格	NPN Bipolar Digital Transistor (BRT)
MMUN2230	WEITRON	获取价格	Bias Resistor Transistor NPN Silicon
MMUN2230LT1	LRC	获取价格	Bias Resistor Transistor
MMUN2230LT1	ONSEMI	获取价格	Bias Resistor Transistor
MMUN2230LT1	MOTOROLA	获取价格	NPN SILICON BIAS RESISTOR TRANSISTOR
MMUN2230LT1G	ONSEMI	获取价格	Bias Resistor Transistor

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