Datasheet > MMUN2215LT1

MMUN2215LT1

更新时间： 2024-01-23 02:49:00

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
10页	144K
描述
Bias Resistor Transistor

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中文翻译

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技术参数
数据手册

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MMUN2215LT1 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.4	Is Samacsys：	N
最大集电极电流 (IC)：	0.1 A	最小直流电流增益 (hFE)：	160
元件数量：	1	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.2 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管元件材料：	SILICON
Base Number Matches：	1

MMUN2215LT1 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

^MM^MUM^NU²²N¹¹2^LT2¹1^S1^eL^riT^es1

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

SERIES

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the SOT-23

package which is designed for low power surface mount applications.

CASE 318, STYLE 6

SOT–23 (TO–236AB)

PIN 3

• Simplifies Circuit Design

• Reduces Board Space and Component Count

• The SOT-23 package can be soldered using wave or reflow. The

modified gull-winged leads absorb thermal stress during soldering

eliminating the possibility of damage to the die.

COLLECTOR

(OUTPUT)

R₁

R₂

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

MARKINGDIAGRAM

• Available in 8 mm embossed tape and reel. Use the Device

Number to order the 7 inch/3000 unit reel. Replace “T1” with

“T3” in the Device Number to order the13 inch/10,000 unit reel.

A6x

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

V_CBO

V_CEO

I_C

Value

Unit

Vdc

A6x = Device Marking

= A – L(See Page 2)

= Date Code

Vdc

100

mAdc

Total Power Dissipation @ T_A= 25°C

(Note 1.) Derate above 25°C

P_D

*200

1.6

mW/°C

ORDERING INFORMATION

Device

Package

SOT–23

Shipping

DEVICE MARKING AND RESISTOR VALUES

MMUN2211LT1

MMUN2212LT1

MMUN2213LT1

MMUN2214LT1

MMUN2215LT1

MMUN2216LT1

MMUN2230LT1

MMUN2231LT1

MMUN2232LT1

MMUN2233LT1

MMUN2234LT1

MMUN2235LT1

MMUN2238LT1

MMUN2241LT1

3000/Tape & Reel

Device

Marking

A8A

A8B

A8C

A8D

A8E

A8F

R1(K)

R2(K)

∞

MMUN2211LT1

MMUN2212LT1

MMUN2213LT1

MMUN2214LT1

MMUN2215LT1

MMUN2216LT1

MMUN2230LT1

MMUN2231LT1

MMUN2232LT1

MMUN2233LT1

MMUN2234LT1

MMUN2235LT1

MMUN2238LT1

MMUN2241LT1

4.7

1.0

2.2

4.7

∞

A8G

A8H

A8J

1.0

2.2

4.7

∞

A8K

A8L

A8M

A8R

A8U

2.2

100

∞

1. Device mounted on a FR-4 glass epoxy printed circuit board using the

minimum recommended footprint.

MMUN2211S-1/11

12 3 4 5 6 7...10

中文翻译

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与MMUN2215LT1相关器件

型号	品牌	获取价格	描述	数据表
MMUN2215LT1G	ONSEMI	获取价格	Bias Resistor Transistor
MMUN2215RLT1	ETL	获取价格	Bias Resistor Transistor
MMUN2215RLT1	LRC	获取价格	Bias Resistor Transistor
MMUN2216	WEITRON	获取价格	Bias Resistor Transistor NPN Silicon
MMUN2216L	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 4.7 k, R2 = k
MMUN2216LT1	MOTOROLA	获取价格	NPN SILICON BIAS RESISTOR TRANSISTOR
MMUN2216LT1	LRC	获取价格	Bias Resistor Transistor
MMUN2216LT1	ONSEMI	获取价格	Bias Resistor Transistor
MMUN2216LT1G	ONSEMI	获取价格	Bias Resistor Transistor
MMUN2216LT3	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236A

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