Datasheet > MMUN2131-G

MMUN2131-G

更新时间： 2024-09-27 19:56:55

品牌	Logo	应用领域
WEITRON		/
页数	文件大小	规格书
6页	125K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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MMUN2131-G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

MMUN2131-G 数据手册

MMUN2111 Series

Bias Resistor Transistor

PNP Silicon

COLLECTOR

R 1

R 2

BASE

* “G” Lead(Pb)-Free

EMITTER

SOT-23

( T =25 C unless otherwise noted)

Maximum Ratings

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

CEO

Vdc

Collector-Base Voltage

CBO

Collector Current-Continuous

mAdc

100

Thermal Characteristics

Max

Unit

Characteristics

Symbol

Total Device Dissipation FR-5 Board

246

400

(1)

(2)

(1)

(1)T =25 C

Derate above 25 C

1.5

mW/ C

2.0 (2)

508

311

C/W

Thermal Resistance, Junction to Ambient

Junction and Storage,Temperature Range

-55 to +150

J,Tstg

1.FR-4 @ minimum pad

2.FR-4 @ 1.0 1.0 inch Pad

Device Marking and Resistor Values

Device

Marking

R1(K)

R2(K)

Device

Marking

R1(K)

R2(K)

MMUN2111

A6A

A6G

A6H

A6J

A6K

A6L

MMUN2130

MMUN2131

1.0

2.2

4.7

1.0

2.2

MMUN2112

MMUN2113

MMUN2114

MMUN2115

MMUN2116

A6B

A6C

A6D

A6E

4.7

MMUN2132

MMUN2133

MMUN2134

4.7

A6F

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