Datasheet > MMT02P038UK

MMT02P038UK

更新时间： 2024-11-06 14:53:43

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
6页	336K
描述
小信号金氧半電晶體

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中文翻译

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数据手册

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MMT02P038UK 数据手册

MMT02P038UK

P-Channel Enhancement Mode MOSFET

Drain

Features

• Typical ESD Protection HBM Class 1C

Classification

Voltage Range(V)

< 125

Gate

125 to < 250

250 to < 500

500 to < 1000

1000 to < 2000

2000 to < 4000

4000 to < 8000

≥ 8000

Source

1. Gate 2. Source 3. Drain

DFN2020-3H Plastic Package

Applications

• Portable appliances

• Battery management

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

-V_DS

Gate-Source Voltage

V_GS

-I_D

± 10

Drain Current

Peak Drain Current, Pulsed ¹⁾

-I_DM

P_D

1.5

℃

Power Dissipation

Operating Junction and Storage Temperature Range

T_j, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

Unit

Thermal Resistance - Junction to Ambient ²⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C.

t ≤10 s

℃/W

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

1 / 6

Dated: 21/04/2021 Rev:01

12 3 4 5 6

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