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MMSZ3V6ET1G

更新时间： 2024-11-25 03:21:03
品牌 Logo 应用领域
安森美 - ONSEMI 稳压器二极管齐纳二极管测试光电二极管
页数 文件大小 规格书
7页 82K
描述
Zener Voltage Regulators 500 mW SOD−123 Surface Mount

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中文翻译

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MMSZ3V6ET1G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：LEAD FREE, PLASTIC, CASE 425-04, 2 PIN
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.28Is Samacsys：N
配置：SINGLE二极管元件材料：SILICON
二极管类型：ZENER DIODE最大动态阻抗：90 Ω
JESD-30 代码：R-PDSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL最大功率耗散：0.5 W
认证状态：Not Qualified标称参考电压：3.6 V
子类别：Voltage Reference Diodes表面贴装：YES
技术：ZENER端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40最大电压容差：5%
工作测试电流：5 mABase Number Matches：1

MMSZ3V6ET1G 数据手册

 浏览型号MMSZ3V6ET1G的Datasheet PDF文件第2页浏览型号MMSZ3V6ET1G的Datasheet PDF文件第3页浏览型号MMSZ3V6ET1G的Datasheet PDF文件第4页浏览型号MMSZ3V6ET1G的Datasheet PDF文件第5页浏览型号MMSZ3V6ET1G的Datasheet PDF文件第6页浏览型号MMSZ3V6ET1G的Datasheet PDF文件第7页 
MMSZ2V4ET1 Series  
Zener Voltage Regulators  
500 mW SOD−123 Surface Mount  
Three complete series of Zener diodes are offered in the convenient,  
surface mount plastic SOD−123 package. These devices provide a  
convenient alternative to the leadless 34−package style.  
http://onsemi.com  
Specification Features  
• 500 mW Rating on FR−4 or FR−5 Board  
1
2
• Wide Zener Reverse Voltage Range − 2.4 V to 56 V  
• Package Designed for Optimal Automated Board Assembly  
• Small Package Size for High Density Applications  
• ESD Rating of Class 3 (>16 kV) per Human Body Model  
• Peak Power − 225 W (8 X 20 ms)  
Cathode  
Anode  
2
• Pb−Free Packages are Available  
1
Mechanical Characteristics  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
SOD−123  
CASE 425  
STYLE 1  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
MARKING DIAGRAM  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
xxx M G  
G
Peak Power Dissipation @ 20 ms (Note 1)  
P
225  
W
pk  
@ T ≤ 25°C  
L
Total Power Dissipation on FR−5 Board,  
P
D
(Note 2) @ T = 75°C  
500  
6.7  
mW  
mW/°C  
L
xxx = Device Code  
Derated above 75°C  
M
= Date Code  
G
= Pb−Free Package  
Thermal Resistance, Junction−to−Ambient  
(Note 3)  
R
340  
°C/W  
°C/W  
°C  
q
JA  
(Note: Microdot may be in either location)  
Thermal Resistance, Junction−to−Lead  
(Note 3)  
R
q
JL  
150  
ORDERING INFORMATION  
Junction and Storage Temperature Range T , T  
−55 to +150  
J
stg  
†
Device  
Package  
Shipping  
3000/Tape & Reel  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Nonrepetitive current pulse per Figure 11  
2. FR−5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint  
3. Thermal Resistance measurement obtained via infrared Scan Method  
MMSZxxxET1  
SOD−123  
(Pb−Free)  
MMSZxxxET3  
SOD−123 10,000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 3 of  
this data sheet.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 5  
MMSZ2V4ET1/D  
 
1234567

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