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MMSTA92_2

更新时间： 2024-09-13 12:20:07
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 123K
描述
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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中文翻译

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MMSTA92_2 数据手册

 浏览型号MMSTA92_2的Datasheet PDF文件第2页浏览型号MMSTA92_2的Datasheet PDF文件第3页 
MMSTA92  
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
A
C
•
•
•
•
•
Epitaxial Planar Die Construction  
SOT-323  
Complementary NPN Type Available (MMSTA42)  
Ideal for Low Power Amplification and Switching  
Lead Free/RoHS Compliant (Note 2)  
Dim  
A
B
C
D
E
Min  
0.25  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
C
B
"Green" Device (Notes 3 and 4)  
B
E
Mechanical Data  
G
H
0.65 Nominal  
•
•
Case: SOT-323  
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
Case Material: Molded Plastic, "Green" Molding  
Compound, Note 4. UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over  
Alloy 42 leadframe).  
G
H
J
K
J
M
•
•
•
•
L
D
E
K
L
0.90  
0.25  
0.10  
0°  
C
M
α
•
•
•
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.006 grams (approximate)  
All Dimensions in mm  
E
B
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (Note 1)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-300  
-300  
-5.0  
-100  
Unit  
V
V
V
mA  
mW  
°C/W  
°C  
Power Dissipation (Note 1)  
200  
Pd  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
625  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Min  
Max  
Unit  
Test Condition  
-300  
-300  
-5.0  
⎯
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
⎯
⎯
⎯
IC = -100μA, IE = 0  
IC = -1.0mA, IB = 0  
IE = -100μA, IC = 0  
VCB = -200V, IE = 0  
VCE = -3.0V, IC = 0  
V
-250  
nA  
nA  
Collector Cutoff Current  
-100  
IEBO  
⎯
ON CHARACTERISTICS (Note 5)  
IC = -1.0mA, VCE = -10V  
IC = -10mA, VCE = -10V  
IC = -30mA, VCE = -10V  
IC = -20mA, IB = -2.0mA  
IC = -20mA, IB = -2.0mA  
25  
40  
25  
DC Current Gain  
hFE  
⎯
⎯
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
-0.5  
-0.9  
V
V
VCE(SAT)  
VBE(SAT)  
⎯
⎯
6.0  
pF  
Ccb  
fT  
⎯
VCB = -20V, f = 1.0MHz, IE = 0  
VCE = -20V, IC = -10mA,  
f = 100MHz  
Current Gain-Bandwidth Product  
50  
MHz  
⎯
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
5. Short duration pulse test used to minimize self-heating effect.  
MMSTA92  
© Diodes Incorporated  
DS30174 Rev. 9 - 2  
1 of 3  
www.diodes.com  
123

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