Datasheet > MMSTA92_11

MMSTA92_11

更新时间： 2024-09-13 10:51:43

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
2页	198K
描述
PNP Small Signal Transistors

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中文翻译

获取价格

数据手册

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MMSTA92_11 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMSTA92

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

PNP Small Signal

Transistors

RoHS Compliant. See ordering information)

Epitaxial Planar Die Construction

Ideal for Medium Power Amplification and Switching

Ultra-small surface mount package

Marking:K3R

•

Epoxy meets UL 94 V-0 flammability rating

SOT-323

Moisure Sensitivity Level 1

Maximum Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Rating

300

5.0

100

200

-55 to +150

Unit

Collector Current-Continuous ^{(1) (3)}

Power dissipation ⁽¹⁾

^OC

P_C

T_J

T_STG

Junction Temperature

Storage Temperature

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

300

5.0

---

Vdc

DIMENSIONS

(I =1.0mAdc, I_B=0)

INCHES

Collector-Base Breakdown Voltage

(I =100uAdc, I =0)

DIM

MIN

.071

.045

.079

MAX

.087

.053

.087

MIN

1.80

1.15

2.00

MAX

NOTE

2.20

1.35

2.20

Collector-Emitter Breakdown Voltage

---

Vdc

(I =100uAdc, I_C=0)

.026 Nominal

0.65Nominal

1.20

.30

.000

.90

.100

.30

.047

.055

.016

.004

.039

.010

.016

1.40

.40

.100

1.00

.250

.40

Collector-Base Cutoff Current

(V_CB=200Vdc,I_E=0)

Emitter-Base Cutoff Current

(V_CE=3.0Vdc, I_C=0)

250

100

nAdc

.012

.000

.035

.004

.012

I_EBO

---

ON CHARACTERISTICS⁽²⁾

Suggested Solder

Pad Layout

0.70

h_FE

DC Current Gain

(I_C=1.0mAdc, V_CE=10Vdc)

(I_C=10mAdc, V_CE=10Vdc)

(I_C=30mAdc, V_CE=10Vdc)

Collector-Emitter Saturation Voltage

---

0.5

---

0.90

V_CE(sat)

V_BE(sat)

Vdc

(I =20mAdc, I_B=2.0mAdc)

Base-Emitter Saturation Voltage

---

0.9

Vdc

1.90

(I =20mAdc, I_B=2.0mAdc)

SMALL SIGNALCHARACTERISTICS

f_T

Current-Gain-Bandwidth Product

---

MHz

0.65

(V_CE=20V, f=100MHz, I_C=10mA)

Collector-Base Capacitance

(V_CB=20V, f=1.0MHz, I_E=0)

C_CB

6.0

0.65

Note: 1. Valid provided that terminals are kept at ambient temperature.

2. Pulse test: Pulse width<300us, duty cycle<2%

3. When operated within safe operating area constraints.

www.mccsemi.com

1 of 2

Revision: A

2011/01/01

中文翻译

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与MMSTA92_11相关器件

型号	品牌	获取价格	描述	数据表
MMSTA92_15	WINNERJOIN	获取价格	PNP TRANSISTOR
MMSTA92_2	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMSTA92-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA
MMSTA92-7	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMSTA92-7-F	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMSTA92HE3	MCC	获取价格	Tape: 3K/Reel , 120K/Ctn;
MMSTA92-T	MCC	获取价格	暂无描述
MMSTA92-TP	MCC	获取价格	PNP Small Signal Transistors
MMSTA92-TP-HF	MCC	获取价格	暂无描述
MMSV3401T1	MOTOROLA	获取价格	35V, SILICON, PIN DIODE, CASE 425-04, 2 PIN

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