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MMSTA92-TP-HF PDF预览

MMSTA92-TP-HF

更新时间: 2024-09-13 13:01:47
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
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2页 198K
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MMSTA92-TP-HF 数据手册

 浏览型号MMSTA92-TP-HF的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
MMSTA92  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
PNP Small Signal  
Transistors  
RoHS Compliant. See ordering information)  
Epitaxial Planar Die Construction  
Ideal for Medium Power Amplification and Switching  
Ultra-small surface mount package  
Marking:K3R  
·
Epoxy meets UL 94 V-0 flammability rating  
SOT-323  
·
Moisure Sensitivity Level 1  
Maximum Ratings  
A
D
C
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Rating  
300  
300  
5.0  
100  
200  
-55 to +150  
-55 to +150  
Unit  
V
V
C
B
V
Collector Current-Continuous (1) (3)  
Power dissipation (1)  
mA  
mW  
OC  
OC  
B
E
F
PC  
E
TJ  
TSTG  
Junction Temperature  
Storage Temperature  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
H
G
J
Symbol  
Parameter  
Min  
Max  
Units  
K
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage  
300  
300  
5.0  
---  
---  
---  
Vdc  
Vdc  
DIMENSIONS  
(I =1.0mAdc, IB=0)  
C
INCHES  
MM  
Collector-Base Breakdown Voltage  
(I =100uAdc, I =0)  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.079  
MAX  
.087  
.053  
.087  
MIN  
1.80  
1.15  
2.00  
MAX  
NOTE  
2.20  
1.35  
2.20  
C
E
Collector-Emitter Breakdown Voltage  
---  
Vdc  
(I =100uAdc, IC=0)  
E
.026 Nominal  
0.65Nominal  
1.20  
.30  
.000  
.90  
.100  
.30  
.047  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
Collector-Base Cutoff Current  
(VCB=200Vdc,IE=0)  
Emitter-Base Cutoff Current  
(VCE=3.0Vdc, IC=0)  
250  
100  
nAdc  
nAdc  
F
.012  
.000  
.035  
.004  
.012  
G
H
J
IEBO  
---  
K
ON CHARACTERISTICS(2)  
Suggested Solder  
Pad Layout  
0.70  
hFE  
DC Current Gain  
(IC=1.0mAdc, VCE=10Vdc)  
(IC=10mAdc, VCE=10Vdc)  
(IC=30mAdc, VCE=10Vdc)  
Collector-Emitter Saturation Voltage  
25  
40  
25  
---  
---  
---  
---  
0.5  
---  
---  
---  
0.90  
VCE(sat)  
VBE(sat)  
Vdc  
(I =20mAdc, IB=2.0mAdc)  
C
Base-Emitter Saturation Voltage  
---  
0.9  
Vdc  
1.90  
mm  
(I =20mAdc, IB=2.0mAdc)  
C
SMALL SIGNALCHARACTERISTICS  
fT  
Current-Gain-Bandwidth Product  
50  
---  
---  
MHz  
pF  
0.65  
(VCE=20V, f=100MHz, IC=10mA)  
Collector-Base Capacitance  
(VCB=20V, f=1.0MHz, IE=0)  
CCB  
6.0  
0.65  
Note: 1. Valid provided that terminals are kept at ambient temperature.  
2. Pulse test: Pulse width<300us, duty cycle<2%  
3. When operated within safe operating area constraints.  
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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