Datasheet > MMSTA92

MMSTA92

更新时间： 2024-09-24 10:51:43

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
1页	402K
描述
TRANSISTOR(PNP)

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中文翻译

获取价格

数据手册

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MMSTA92 数据手册

MMSTA92

TRANSISTOR(PNP)

SOT–323

FEATURES

 Small Surface Mount Package

 Complementary to MMSTA42

 Ideal for Medium Power Amplification and Switching

MARKING:K3R

1. BASE

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

2. EMITTER

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

3. COLLECTOR

Collector-Base Voltage

-310

Collector-Emitter Voltage

Emitter-Base Voltage

-305

-5

Collector Current

-300

℃/W

℃

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

200

P_C

625

R_ΘJA

T_j

150

Storage Temperature

T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

V_(BR)CBO

I_C=-100µA, I_E=0

-310

Collector-base breakdown voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=-1mA, I_B=0

-305

-5

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-100µA, I_C=0

V_CB=-200V, I_E=0

-250

-5

µA

V_CE=-200V, I_B=0

I_CEO

I_EBO

Collector cut-off current

Emitter cut-off current

V_CE=-300V, I_B=0

V_EB=-5V, I_C=0

-100

V_CE=-10V, I_C=-1mA

V_CE=-10V, I_C=-10mA

V_CE=-10V, I_C=-30mA

I_C=-20mA, I_B=-2mA

V_CE=-20V,I_E=-10mA , f=30MHz

V_CB=-20V, I_E=0, f=1MHz

100

h_FE

DC current gain

200

V_CE(sat)

V_BE(sat)

f_T

-0.2

-0.9

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

MHz

C_ob

Collector output capacitance

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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