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MMST5551-13 PDF预览

MMST5551-13

更新时间: 2024-01-08 15:17:18
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
3页 74K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3

MMST5551-13 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.34
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:160 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):235极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

MMST5551-13 数据手册

 浏览型号MMST5551-13的Datasheet PDF文件第2页浏览型号MMST5551-13的Datasheet PDF文件第3页 
SPICE MODEL: MMST5551  
MMST5551  
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
·
·
Epitaxial Planar Die Construction  
SOT-323  
Complementary PNP Type Available  
(MMST5401)  
A
Dim  
A
Min  
0.25  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
C
·
·
·
Ideal for Medium Power Amplification and Switching  
Ultra-Small Surface Mount Package  
B
C
B
Available in Lead Free/RoHS Compliant Version (Note 2)  
C
B
E
D
0.65 Nominal  
G
H
Mechanical Data  
E
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
G
H
K
J
·
·
Case: SOT-323  
M
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
J
L
D
E
K
0.90  
0.25  
0.10  
0°  
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
L
C
M
Terminals: Solderable per MIL-STD-202, Method 208  
a
Also Available in Lead Free Plating (Matte Tin Finish  
annealed over Alloy 42 leadframe). Please See Ordering  
Information, Note 5, on Page 2  
All Dimensions in mm  
E
B
·
·
·
Marking (See Page 2) : K4N  
Ordering & Date Code Information: See Page 2  
Weight: 0.006 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
Collector-Base Voltage  
180  
160  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous (Note 1)  
Power Dissipation (Note 1)  
200  
mA  
mW  
°C/W  
°C  
Pd  
200  
RqJA  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
625  
Tj, TSTG  
-55 to +150  
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
DS30173 Rev. 5 - 2  
1 of 3  
MMST5551  
www.diodes.com  
ã Diodes Incorporated  

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