Datasheet > MMST5401

MMST5401

更新时间： 2024-04-09 18:58:48

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	293K
描述
150V,0.6A,General Purpose PNP Bipolar Transistor

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MMST5401 数据手册

Product Specification

PNP General Purpose Transistor

MMST5401

FEATURES



Epitaxial planar die construction

Complementary NPN type available

(MMST5551)



Also available in lead free version

APPLICATIONS



Ideal for medium power amplification and switching

SOT-323

ORDERING INFORMATION

Type No.

Marking

K4M

Package Code

MMST5401

SOT-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-160

UNIT

collector-base voltage

collector-emitter voltage

emitter-base voltage

-150

-5

collector current (DC)

-0.6

P_C

Collector dissipation

0.2

R_θJA

Thermal resistance junction to ambient

junction and storage temperature

625

°C /W

°C

T_J,T_STG

-55 to +150

STM0359A: December 2019

www.gmesemi.com

12 3 4

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