Datasheet > MMST3904

MMST3904

更新时间： 2024-11-09 18:09:15

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	471K
描述
SOT-323

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中文翻译

获取价格

数据手册

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MMST3904 数据手册

MMST3904

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Complementary to MMST3906

 Epitaxial planar die construction

 Surface Mount device

SOT-323

MECHANICAL DATA



Case: SOT-323

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

200

625

150

°C/W

°C

P_C

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I =10uA I =0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V(BR)CBO

V(BR)CEO

V(BR)EBO

，

I_C=1mA，I_B=0

I =10uA I =0

，

I_CBO

V_CB=60V, I_E=0

Collector cut-off current

I_CEX

V_CE=30V, V_BE(OFF)=3V

V_CE=1V, I_C=0.1mA

V_CE=1V, I_C=1mA

100

DC current gain

h_FE*

300

V_CE=1V, I_C=10mA

V_CE=1V, I_C=50mA

I_C=10mA，I_B=1mA

I_C=50mA，I_B=5mA

I_C=10mA，I_B=1mA

I_C=50mA，I_B=5mA

V_CE=20V,I_C=10mA,f=100

V_CB=5V,I_E=0,f=1

MHz

V_EB=0.5V,I_E=0,f=1

MHz

V_CC=3V, I_C=10mA，

V_BE(OFF)=0.5V,I_B1=1mA

V_CC=3V,I_C=10mA

I_B1=I_B2=1mA

0.25

0.3

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

0.85

0.95

V_BE(sat)

Transition frequency

Output capacitance

Input capacitance

Delay time

f_T

C_ob

C_ib

t_d

t_r

t_S

300

MHz

225

Rise time

Storage time

Fall time

t_f

*Pulse test:pulse width≤300us,duty cycle≤2%;

Marking:K2N

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