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MMST2907A_11 PDF预览

MMST2907A_11

更新时间: 2024-02-16 03:30:39
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
2页 186K
描述
PNP Small Signal Transistors

MMST2907A_11 数据手册

 浏览型号MMST2907A_11的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
MMST2907A  
Micro Commercial Components  
Features  
Power dissipation: 200mW (Tamb=25?)  
PNP Small Signal  
Transistors  
Collector current: -0.6A  
Marking Code: K3F  
Operating and Storage junction temperature range  
-55? to + 150?  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
SOT-323  
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
A
D
Symbol  
Parameter  
Min  
Max  
Units  
C
(2)  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage  
(IC=-10mAdc, IB=0)  
Collector-Base Breakdown Voltage  
(IC=-10uAdc, IE=0)  
Collector-Emitter Breakdown Voltage  
(IE=-10uAdc, IC=0)  
Collector Cutoff Current  
(VCB=-50Vdc, IE=0Vdc)  
Collector Cutoff Current  
(VCE=-35Vdc, IB=0Vdc)  
Emitter Cutoff Current  
-60  
-60  
-5.0  
---  
---  
---  
Vdc  
Vdc  
C
B
E
B
---  
Vdc  
F
E
-0.01  
-0.05  
-0.01  
µAdc  
µAdc  
µAdc  
ICEO  
---  
H
G
J
IEBO  
---  
K
(VEB=-3Vdc, IC=0Vdc)  
hFE  
DC Current Gain  
DIMENSIONS  
INCHES  
(IC=-150mAdc, VCE=-10Vdc)  
(IC=-1mAdc, VCE=-10Vdc)  
Collector-Emitter Saturation Voltage  
(IC=-500mAdc, IB=-50mAdc)  
Base-Emitter Saturation Voltage  
(IC=-500mAdc, IB=-50mAdc)  
Current Gain-Bandwidth Product  
(VCE=-20Vdc, IC=-50mAdc, f=100MHz)  
Output Capacitance  
100  
100  
300  
---  
---  
---  
MM  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.079  
MAX  
.087  
.053  
.087  
MIN  
1.80  
1.15  
2.00  
MAX  
2.20  
1.35  
2.20  
NOTE  
VCE(sat)  
VBE(sat)  
---  
---  
-0.6  
Vdc  
-1.2  
---  
Vdc  
.026 Nominal  
0.65Nominal  
1.20  
.30  
.000  
.90  
.100  
.30  
.047  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
fT  
200  
MHz  
F
.012  
.000  
.035  
.004  
.012  
G
H
J
Cob  
---  
8
pF  
(VCB=-10Vdc, f=1.0MHz, IE=0)  
td  
tr  
ts  
tf  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
V
V
CC=-30V,IC=-150mA,  
BE(off)=-0.5V,IB1=-15mA  
---  
---  
---  
---  
10  
25  
80  
30  
ns  
ns  
ns  
ns  
K
Suggested Solder  
Pad Layout  
0.70  
VCC=-30V, IC=-150mA,  
IB1=IB2=-15mA  
0.90  
mm  
1.90  
0.65  
0.65  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 2  

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