Datasheet > MMST2222A

MMST2222A

更新时间： 2023-12-06 20:11:25

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	630K
描述
SOT-323

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数据手册

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MMST2222A 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

SOT-323

MMST2222A

TRANSISTOR ( NPN )

FEATURES

y Epitaxial planar die construction

y Complementary PNP Type available(MMST2907A)

1. BASE

MARKING: K3P

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol Parameter

Value

Unit

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

600

200

P_C

Collector Dissipation

Operation Junction and Storage Temperature Range

T_J,T_stg

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T^a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_CEO

I_EBO

I_C= 10μA, I_E=0

I_C= 10mA, I_B=0

I_E=10μA, I_C=0

V_CB=70 V, I_E=0

V_CE=35V , I_B=0

V_EB= 3V , I_C=0

100

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

h_FE(5)

h_FE(6)

V_CE=10V, I_C=0.1mA

V_CE=10V, I_C= 1mA

V_CE=10V, I_C= 10mA

V_CE=10V, I_C= 150mA

V_CE=10V, I_C= 500mA

V_CE=1V, I_C= 150mA

I_C=500 mA, I_B= 50mA

I_C=150 mA, I_B=15mA

I_C=500 mA, I_B= 50mA

I_C=150 mA, I_B=15mA

V_CE=20V, I_C= 20mA

f=100MHz

100

DC current gain

300

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

0.3

2.0

1.2

300

MHz

Output Capacitance

Delay time

Rise time

Storage time

Fall time

C_ob

t_d

t_r

t_S

t_f

225

V_CB=10V, I_E= 0,f=1MHz

V_CC=30V, V_BE(off)=-0.5V

I_C=150mA , I_B1= 15mA

V_CC=30V, I_C=150mA

I_B1=-I_B2=15mA

www.jscj-elec.com

Rev. - 2.0

12 3 4

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