Datasheet > MMSF60R190QTH

MMSF60R190QTH

更新时间： 2024-09-14 17:15:39

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	1537K
描述
TO-220SF

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MMSF60R190QTH 数据手册

MMSF60R190Q Datasheet

MMSF60R190Q

600V 0.19Ω N-channel MOSFET

 Description

MMSF60R190Q is power MOSFET using Magnachip’s advanced super junction technology that

can realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

designers as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_j,max

R_DS(on),max

V_TH,typ

Value

Unit

650

0.19

Ω

I_D

Q_g,typ

 Features

 Low Power Loss by High Speed Switching and Low On-Resistance

 100% Avalanche Tested

 Green Package – Pb Free Plating, Halogen Free

 Applications

 PFC Power Supply Stages

 Switching Applications

 Adapter

 Ordering Information

Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

MMSF60R190QTH 60R190QS

-55 ~ 150℃

TO-220SF

Tube

Halogen Free

May. 2021. Revision 1.3

Magnachip Semiconductor Ltd.

12 3 4 5 6 7...10

中文翻译

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