Datasheet > MMRF5014H

MMRF5014H

更新时间： 2024-11-03 15:19:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
18页	770K
描述
WIDEBAND RF POWER GaN ON SiC TRANSISTOR, 1-2700 MHz, 125 W CW, 50 V

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Document Number: MMRF5014H

Rev. 3, 05/2018

NXP Semiconductors

Technical Data

RF Power GaN Transistor

MMRF5014H

This 125 W CW RF power transistor is optimized for wideband operation up to

2700 MHz and includes input matching for extended bandwidth performance.

With its high gain and high ruggedness, this device is ideally suited for CW,

pulse and wideband RF applications.

1–2700 MHz, 125 W CW, 50 V

WIDEBAND

RF POWER GaN TRANSISTOR

This part is characterized and performance is guaranteed for applications

operating in the 1–2700 MHz band. There is no guarantee of performance when

this part is used in applications designed outside of these frequencies.

Typical Narrowband Performance: V = 50 Vdc, I = 350 mA, T = 25C

(W)

Frequency

(MHz)



out

Signal Type

(dB)

16.0

18.0

(%)

64.2

66.8

(1)

2500

125 CW

(1)

2500

125 Peak

Pulse

(100 sec,

20% Duty Cycle)

NI--360H--2SB

Typical Wideband Performance: V = 50 Vdc, T = 25C

(2)

(W)

Frequency

(MHz)



out

Signal Type

(dB)

(%)

(3)

200–2500

100 CW

12.0

40.0

(4)

1300–1900

125 CW

14.5

45.0

Gate

Drain

Load Mismatch/Ruggedness

Frequency

(W)

Test

Voltage

Signal Type

VSWR

(MHz)

Result

(Top View)

(1)

2500

Pulse

(100 sec,

20% Duty Cycle)

> 20:1 at

All Phase

Angles

5.0 Peak

(3 dB

Overdrive)

No Device

Degradation

Note: The backside of the package is the

source terminal for the transistor.

Figure 1. Pin Connections

1. Measured in 2500 MHz narrowband test circuit.

2. The values shown are the minimum measured performance numbers across the

indicated frequency range.

3. Measured in 200–2500 MHz broadband reference circuit.

4. Measured in 1300–1900 MHz broadband reference circuit.

Features



Advanced GaN on SiC, offering high power density

Decade bandwidth performance

Low thermal resistance

Input matched for extended wideband performance

High ruggedness: > 20:1 VSWR

Typical Applications



Ideal for military end--use applications,

including the following:



Also suitable for commercial applications,

including the following:

– Narrowband and multi--octave

wideband amplifiers

– Public mobile radios, including

emergency service radios

– Radar

– Industrial, scientific and medical

– Wideband laboratory amplifiers

– Wireless cellular infrastructure

– Jammers

– EMC testing

 2015, 2017–2018 NXP B.V.

MMRF5014H

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...18

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与MMRF5014H相关器件

型号	品牌	获取价格	描述	数据表
MMRF5014H-200MHZ	NXP	获取价格	RF Power Field-Effect Transistor
MMRF5014HR5	NXP	获取价格	WIDEBAND RF POWER GaN ON SiC TRANSISTOR, 1-2700 MHz, 125 W CW, 50 V
MMRF5017HSR5	NXP	获取价格	RF Power Field-Effect Transistor
MMRF5018HS	NXP	获取价格	Airfast RF Power GaN Transistor, 125 W CW over 1-2700 MHz, 50 V
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MMS006PP3E-Switch-SPDT-Eval	MICROCHIP	获取价格	The MMS006PP3E is the EVB for the MMS006PP3
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