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MMPQ2369 PDF预览

MMPQ2369

更新时间: 2024-02-16 00:03:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关小信号双极晶体管光电二极管
页数 文件大小 规格书
6页 200K
描述
NPN Switching Transistor

MMPQ2369 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G16
针数:16Reach Compliance Code:unknown
HTS代码:8541.21.00.95风险等级:5.35
最大集电极电流 (IC):0.2 A配置:SEPARATE, 4 ELEMENTS
最小直流电流增益 (hFE):40JESD-30 代码:R-PDSO-G16
JESD-609代码:e0元件数量:4
端子数量:16最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MMPQ2369 数据手册

 浏览型号MMPQ2369的Datasheet PDF文件第2页浏览型号MMPQ2369的Datasheet PDF文件第3页浏览型号MMPQ2369的Datasheet PDF文件第4页浏览型号MMPQ2369的Datasheet PDF文件第5页浏览型号MMPQ2369的Datasheet PDF文件第6页 
Discrete POWER & Signal  
Technologies  
PN2369A  
MMBT2369A  
MMPQ2369  
B
E
B
E
C
B
E
B
E
C
C
C
E
C
C
C
TO-92  
C
C
C
B
SOT-23  
Mark: 1S  
B
E
SOIC-16  
NPN Switching Transistor  
This device is designed for high speed saturation switching at collector  
currents of 10 mA to 100 mA. Sourced from Process 21.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
15  
40  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
4.5  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
200  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN2369A  
MMBT2369A*  
MMPQ2369  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
350  
2.8  
125  
225  
1.8  
1,000  
8.0  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
Effective 4 Die  
357  
556  
°C/W  
°C/W  
°C/W  
JA  
125  
240  
Each Die  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

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