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MMPQ2369 PDF预览

MMPQ2369

更新时间: 2024-09-22 10:51:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体开关晶体管光电二极管
页数 文件大小 规格书
4页 145K
描述
Quad Switching Transistor NPN Silicon

MMPQ2369 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:CASE 751B, SOP-16针数:16
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.35
最大集电极电流 (IC):0.5 A基于收集器的最大容量:4 pF
集电极-发射极最大电压:15 V配置:SEPARATE, 4 ELEMENTS
最小直流电流增益 (hFE):40JESD-30 代码:R-PDSO-G16
JESD-609代码:e0湿度敏感等级:1
元件数量:4端子数量:16
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):235极性/信道类型:NPN
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn80Pb20)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):550 MHz
Base Number Matches:1

MMPQ2369 数据手册

 浏览型号MMPQ2369的Datasheet PDF文件第2页浏览型号MMPQ2369的Datasheet PDF文件第3页浏览型号MMPQ2369的Datasheet PDF文件第4页 
MMPQ2369  
Quad Switching  
Transistor  
NPN Silicon  
MAXIMUM RATINGS  
http://onsemi.com  
Rating  
Symbol  
Value  
15  
Unit  
Vdc  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
V
40  
Vdc  
CB  
EB  
16  
V
4.5  
Vdc  
1
Collector Current —  
Continuous  
I
C
500  
mAdc  
CASE 751B05, STYLE 4  
SO16  
Four  
Transistors  
Equal  
Each  
Transistor  
Power  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
Total Power Dissipation  
P
P
W
D
@ T = 25°C  
0.4  
3.2  
0.72  
6.4  
A
Derate above 25°C  
mW/°C  
Total Power Dissipation  
W
D
@ T = 25°C  
0.66  
5.3  
1.92  
15.4  
C
Derate above 25°C  
mW/°C  
°C  
Operating and Storage  
Junction Temperature  
Range  
T , T  
J
55 to +150  
stg  
ELECTRICAL CHARACTERISTICS  
(T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
CollectorEmitter  
Symbol  
Min  
Typ  
Max  
Unit  
V
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
(1)  
Breakdown Voltage  
15  
40  
(I = 10 mAdc, I = 0)  
C
B
CollectorBase  
Breakdown Voltage  
V
V
Vdc  
Vdc  
(I = 10 mAdc, I = 0)  
C
E
EmitterBase  
Breakdown Voltage  
(I = 10 mAdc, I = 0)  
4.5  
E
C
Collector Cutoff Current  
(V = 20 Vdc, I = 0)  
I
0.4  
mAdc  
CBO  
CB  
E
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 Rev. 2  
MMPQ2369/D  

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