Datasheet > MMGZ5225SPT

MMGZ5225SPT

更新时间： 2024-11-18 05:49:23

品牌	Logo	应用领域
力勤 - CHENMKO		二极管齐纳二极管局域网
页数	文件大小	规格书
5页	121K
描述
SILICON PLANAR POWER ZENER DIODES

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中文翻译

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MMGZ5225SPT 数据手册

MMGZ5221SPT

THRU

CHENMKO ENTERPRISE CO.,LTD

SURFACE MOUNT ZENER

SILICON PLANAR POWER ZENER DIODES

VOLTAGE RANGE 2.4V TO 91V

MMGZ5270SPT

FEATURE

* Small surface mounting type. (MINI-MELF)

* High temperature soldering type.

* ESD rating of class 3(>16 kV) per human body model.

* Silicon planar zener diodes.

Mini-Melf

* Silcon-oxide passivated junction.

* Low temperature coefficient voltage

* 500 mW Rating on FR-4 or FR-5 Board

MECHANICAL

* MINI-MELF Packaging.

CATHODE BAND

0.4

* Cathode indicated by polarity band.

* Mounting position: Any.

(1)

(2)

+0.2

3.4

0.1

1.5Max.

(2)

CIRCUIT

Dimensions in millimeters

Mini-Melf

(1)

MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )

RATINGS

SYMBOL

VALUE

UNITS

Zener Current ( see Table "Characteristics" )

Max. Steady State Power Dissipation @TA=25 C

500

^oC

-65 to +175

Max. Operating Temperature Range

Storage Temperature Range

TSTG

^oC

ELECTRICAL CHARACTERISTICS ( At TA = 25^oC unless otherwise noted )

CHARACTERISTICS

Thermal Resistance Junction to Ambient

Max. Instantaneous Forward Voltage at IF= 10mA

SYMBOL

MIN.

TYP.

MAX.

240

UNITS

^oC/W

0.9

Volts

2002-9

NOTES : 1. The JEDEC type numbers listd have a standaerd tolerance on the normal zener voltage of +10%, Suffix B=+5%, Suffix B=+2%.

2. The zener impedance is derived from 1KHz AC voltage, which results when an AC current having an RMS value equal to 10%

of DC zener current (IZT or IZK) is superimposed on IZT or IZK. Zener impedance is measured at two points to insure a sharp knee

on the breakdown curve to eliminate unstable units.

3. Valid provided that electrodes at distance of 10mm from case are kept ambient temperature.

4. Measured under thermal equilibrium and DC test conditions.

5. The rating listd in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave

or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration.

12 3 4 5

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