Datasheet > MMFTX7001KD

MMFTX7001KD

更新时间： 2024-11-10 14:55:55

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
10页	981K
描述
小信号金氧半電晶體

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中文翻译

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数据手册

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MMFTX7001KD 数据手册

MMFTX7001KD

Complementary N/P-Channel Enhancement Mode MOSFET

Features

• High speed switch

• Built-in G-S Protection Diode

• Typical ESD Protection HBM Class 2

Classification Voltage Range(V)

< 125

Q1: 1.Gate 5.Source 6.Drain

Q2: 3.Gate 2.Source 4.Drain

SOT-26 Plastic Package

125 to < 250

250 to < 500

500 to < 1000

1000 to < 2000

2000 to < 4000

4000 to < 8000

≥ 8000

Application

• Portable appliances

• Battery management

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified) (Q1/Q2)

Value

Unit

Symbol

Parameter

-60

± 20

-350

-1

V_DS

V_GS

I_D

± 20

500

1.5

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Drain Current - Pulsed ¹⁾

Power Dissipation ²⁾

I_DM

P_D

900

℃

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

Thermal Characteristics (Q1/Q2)

Parameter

Symbol

R_θJA

Max.

139

Unit

℃/W

Thermal Resistance from Junction to Ambient ²⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 10

Dated: 08/05/2023 Rev:02

12 3 4 5 6 7...10

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