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MMFT3055VL

更新时间： 2024-11-10 22:30:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
10页 226K
描述
TMOS POWER FET 1.5 AMPERES 60 VOLT

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中文翻译

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MMFT3055VL 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
风险等级：5.88Is Samacsys：N
配置：Single最大漏极电流 (Abs) (ID)：1.5 A
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-609代码：e0
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：2 W
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)Base Number Matches：1

MMFT3055VL 数据手册

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Order this document  
by MMFT3055VL/D  
SEMICONDUCTOR TECHNICAL DATA  
N–Channel Enhancement–Mode Silicon Gate  
TMOS POWER FET  
TM  
TMOS V is a new technology designed to achieve an on–resis-  
tance area product about one–half that of standard MOSFETs. This  
new technology more than doubles the present cell density of our  
50 and 60 volt TMOS devices. Just as with our TMOS E–FET  
designs, TMOS V is designed to withstand high energy in the  
avalanche and commutation modes. Designed for low voltage, high  
speed switching applications in power supplies, converters and  
power motor controls, these devices are particularly well suited for  
bridge circuits where diode speed and commutating safe operating  
areas are critical and offer additional safety margin against  
1.5 AMPERES  
60 VOLTS  
R
= 0.140 OHM  
DS(on)  
D
4
G
1
unexpected voltage transients.  
2
3
New Features of TMOS V  
S
•
On–resistance Area Product about One–half that of Standard  
MOSFETs with New Low Voltage, Low R Technology  
DS(on)  
Faster Switching than E–FET Predecessors  
CASE 318E–04, Style 3  
TO–261AA  
•
Features Common to TMOS V and TMOS E–FETS  
•
•
•
•
Avalanche Energy Specified  
and V Specified at Elevated Temperature  
Static Parameters are the Same for both TMOS V and TMOS E–FET  
Available in 12 mm Tape & Reel  
I
DSS  
DS(on)  
Use MMFT3055VLT1 to order the 7 inch/1000 unit reel  
Use MMFT3055VLT3 to order the 13 inch/4000 unit reel  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
60  
Unit  
Drain–to–Source Voltage  
V
DSS  
Vdc  
Vdc  
Drain–to–Gate Voltage (R  
= 1.0 MΩ)  
Gate–to–Source Voltage – Continuous  
V
DGR  
60  
GS  
V
± 15  
± 20  
Vdc  
Vpk  
GS  
Gate–to–Source Voltage – Non–repetitive (t ≤ 10 ms)  
V
GSM  
p
Drain Current – Continuous  
Drain Current – Continuous @ 100°C  
Drain Current – Single Pulse (t ≤ 10 µs)  
I
I
1.5  
1.2  
5.0  
Adc  
D
D
I
Apk  
p
DM  
Total PD @ T = 25°C mounted on 1” sq. Drain pad on FR–4 bd material  
P
2.1  
1.7  
0.94  
6.3  
Watts  
A
D
Total PD @ T = 25°C mounted on 0.70” sq. Drain pad on FR–4 bd material  
A
Total PD @ T = 25°C mounted on min. Drain pad on FR–4 bd material  
A
Derate above 25°C  
mW/°C  
°C  
Operating and Storage Temperature Range  
T , T  
J stg  
–55 to 175  
Single Pulse Drain–to–Source Avalanche Energy – Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 25 Vdc, V = 5.0 Vdc, Peak I = 3.4 Apk, L = 10 mH, R = 25 Ω )  
58  
GS L G  
Thermal Resistance  
– Junction to Ambient on 1” sq. Drain pad on FR–4 bd material  
– Junction to Ambient on 0.70” sq. Drain pad on FR–4 bd material  
– Junction to Ambient on min. Drain pad on FR–4 bd material  
°C/W  
R
R
R
70  
88  
159  
θJA  
θJA  
θJA  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET, Designer’s, and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
REV 1  
Motorola, Inc. 1996  
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中文翻译

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MMFT3055VL 替代型号

型号 品牌 替代类型 描述 数据表
MMFT3055VLT3 MOTOROLA

功能相似

 1500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMFT3055VLT3G ONSEMI

功能相似

 1500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA, CASE 318E-04, 4 PIN
MMFT3055VLT1 ONSEMI

功能相似

 1500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA, CASE 318E-04, 4 PIN

与MMFT3055VL相关器件

型号 品牌 获取价格 描述 数据表
MMFT3055VLT1 MOTOROLA

获取价格

 		Small Signal Field-Effect Transistor, 1.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
MMFT3055VLT1 ONSEMI

获取价格

 		1500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA, CASE 318E-04, 4 PIN
MMFT3055VLT1G ONSEMI

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 		暂无描述
MMFT3055VLT3 ONSEMI

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 		1500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA, CASE 318E-04, 4 PIN
MMFT3055VLT3 MOTOROLA

获取价格

 		1500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMFT3055VLT3G ONSEMI

获取价格

 		1500mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA, CASE 318E-04, 4 PIN
MMFT3055VT1 MOTOROLA

获取价格

 		Small Signal Field-Effect Transistor, 1.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
MMFT3055VT1 ONSEMI

获取价格

 		1700mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA, CASE 318E-04, 4 PIN
MMFT3055VT1G ONSEMI

获取价格

 		1700mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA, LEAD FREE, CASE 318E-04, 4 PIN
MMFT3055VT3 MOTOROLA

获取价格

 		1700mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA

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