Datasheet > MMF80R900PB

MMF80R900PB

更新时间： 2024-01-25 05:40:41

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	1534K
描述
800V 0.9ohm N-channel MOSFET

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MMF80R900PB 数据手册

MMF80R900PB Datasheet

MMF80R900PB

800V 0.9Ω N-channel MOSFET

 Description

MMF80R900PB is power MOSFET using Magnachip’s advanced super junction technology that

can realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

designers as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_{j, max}

R_{DS(on), max}

V_{TH, typ}

Value

Unit

850

0.9

Ω

I_D

Q_{g, typ}

17.6

 Features

 Low Power Loss by High Speed Switching and Low On-Resistance

 100% Avalanche Tested

 Green Package – Pb Free Plating, Halogen Free

 Applications

 PFC Power Supply Stages

 Switching Applications

 Adapter

 Ordering Information

Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

MMF80R900PBTH

80R900PB

-55 ~ 150^oC

TO-220F

Tube

Compliant

Jan. 2018 Revision 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7...10

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