Datasheet > MMF50R280PTH

MMF50R280PTH

更新时间： 2024-11-18 01:16:47

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	1099K
描述
500V 0.28(ohm) N-channel MOSFET

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MMF50R280PTH 数据手册

MMF50R280P Datasheet

MMF50R280P

500V 0.28Ω N-channel MOSFET

 Description

MMF50R280P is power MOSFET using magnachip’s advanced super junction technology that can

realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

designers as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_j,max

R_DS(on),max

V_TH,typ

Value

Unit

550

0.28

Ω

I_D

TO-220F

Q_g,typ

28.6

 Features

 Low Power Loss by High Speed Switching and Low On-Resistance

 100% Avalanche Tested

 Green Package – Pb Free Plating, Halogen Free

 Applications

 PFC Power Supply Stages

 Switching Applications

 Adapter

 Motor Control

 DC – DC Converters

 Ordering Information

Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

MMF50R280PTH

50R280P

-55 ~ 150℃

TO-220F

Tube

Halogen Free

Jan. 2015 Revision 1.1

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7...10

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