Datasheet > MMDTX441DE

MMDTX441DE

更新时间： 2024-11-10 14:52:19

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	944K
描述
数字三极管

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MMDTX441DE 数据手册

MMDTX441DE

Complementary NPN/PNP Silicon Epitaxial Planar Digital Transistor

Features

• Transistors with different polarity and built-in bias

TR2

resistors R1(47 KΩ) and R2(47 KΩ)

• Simplification of circuit design

TR1

TR1: 1. Emitter 2. Base 6. Collector

TR2: 4. Emitter 5. Base 3. Collector

SOT-563 Plastic package

• Reduces number of components and board space

Applications

• Switching and interface

• Circuit and drive circuit

Absolute Maximum Ratings (T_a= 25 ) (TR1)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

- 10 to 40

Peak Collector Current

I_CM

100

Absolute Maximum Ratings (T_a= 25 ) (TR2)

Parameter

Symbol

-V_CBO

-V_CEO

V_EBO

-I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

- 40 to 10

Peak Collector Current

-I_CM

100

Absolute Maximum Ratings (T_a= 25 ) (TR1 and TR2)

Parameter

Symbol

P_D

Value

150

Unit

Total Power Dissipation

Junction Temperature

T_j

150

Operating ambient and Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics(TR1 and TR2)

Parameter

Symbol

R_θJA

Max.

833

Unit

Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 5

Dated：19/08/2022 Rev: 03

12 3 4 5

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