Datasheet > MMDT5401

MMDT5401

更新时间： 2023-12-06 20:04:04

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1314K
描述
SOT-363

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMDT5401 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-363 Plastic-Encapsulate Transistors

MMDT5401 DUAL TRANSISTOR (PNP+PNP)

SOT-363

FEATURES

Epitaxial Planar Die Construction

Complementary NPN Type Available(MMDT 5551)

Ideal for Medium Power Amplification and Switching

MRKING:K4M

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

-160

-150

-5

Units

Collector Current -Continuous

Collector Power Dissipation

-0.2

0.2

P_C

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-100μA , I_E=0

-160

-150

-5

V_(BR)CEOI_C= -1mA ,

I_B=0

I_C=0

V_(BR)EBOI_E=-10μA,

I_CBO

I_EBO

V_CB=-120 V , I_E=0

V_EB=-3V , I_C=0

-0.05

μA

Emitter cut-off current

h_FE(1)

h_FE(2)

h_FE(3)

V_CE=-5 V, I_C= -1mA

V_CE=-5 V, I_C= -10mA

V_CE=-5 V, I_C= -50mA

DC current gain

300

100

V_CE(sat)1I_C=-10 mA, I_B=-1mA

V_CE(sat)2I_C=-50 mA, I_B=-5mA

V_BE(sat)1I_C= -10 mA, I_B=-1mA

V_BE(sat)2I_C= -50 mA, I_B=-5mA

-0.2

-0.5

-1

Collector-emitter saturation voltage

Base-emitter saturation voltage

-1

Transition frequency

Output Capacitance

Noise Figure

f_T

V_CE= -10V, I_C= -10mA,f = 100MHz

100

MHz

C_ob

V_CB=-10V, I_E= 0,f=1MHz

V_CE= -5.0V, I_C= -200μA,

R_S= 10Ω,f = 1.0kHz

8.0

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

下载PDF

与MMDT5401相关器件

型号	品牌	获取价格	描述	数据表
MMDT5401_1	DIODES	获取价格	DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5401_11	MCC	获取价格	Plastic-Encapsulate Transistors
MMDT5401_15	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
MMDT5401_2	DIODES	获取价格	DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5401-7	DIODES	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 150V V(BR)CEO, 2-Element, PNP, Silicon, ULTRA
MMDT5401-7-F	DIODES	获取价格	DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5401G-AL6-R	UTC	获取价格	Small Signal Bipolar Transistor
MMDT5401HE3	MCC	获取价格	Tape: 3K/Reel , 120K/Ctn;
MMDT5401L-AL6-R	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
MMDT5401Q	DIODES	获取价格	Dual PNP, 150V, 0.2A, SOT363