Datasheet > MMDT5401

MMDT5401

更新时间： 2024-09-29 14:50:03

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	730K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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MMDT5401 技术参数

极性：	PNP×2	Collector-emitter breakdown voltage：	150
Collector Current - Continuous：	0.2	DC current gain - Min：	60
DC current gain - Max：	240	Transition frequency：	100
Package：	SOT-363	Storage Temperature Range：	-55-150
class：	Transistors

MMDT5401 数据手册

MMDT5401

Dual Transistor (NPN/PNP)

SOT-363

Features

Epitaxial Planar Die Construction

Complementary NPN Type Available(MMDT 5551)

Ideal for Medium Power Amplification and Switching

MRKING:K4M

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

-160

-150

-5

Units

Dimensions in inches and (millimeters)

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-0.2

P_C

0.2

℃

T_J

150

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-100μA , I_E=0

-160

-150

-5

V_(BR)CEOI_C= -1mA ,

I_B=0

I_C=0

V_(BR)EBOI_E=-10μA,

I_CBO

I_EBO

V_CB=-120 V , I_E=0

V_EB=-3V , I_C=0

-0.05

μA

Emitter cut-off current

h_FE(1)

h_FE(2)

h_FE(3)

V_CE=-5 V, I_C= -1mA

V_CE=-5 V, I_C= -10mA

V_CE=-5 V, I_C= -50mA

DC current gain

240

V_CE(sat)1I_C=-10 mA, I_B=-1mA

V_CE(sat)2I_C=-50 mA, I_B=-5mA

V_BE(sat)1I_C= -10 mA, I_B=-1mA

V_BE(sat)2I_C= -50 mA, I_B=-5mA

-0.2

-0.5

-1

Collector-emitter saturation voltage

Base-emitter saturation voltage

-1

Transition frequency

Output Capacitance

Noise Figure

f _T

V_CE= -10V, I_C= -10mA,f = 100MHz

100

MHz

C_ob

V_CB=-10V, I_E= 0,f=1MHz

V_CE= -5.0V, I_C= -200μA,

R_S= 10Ω,f = 1.0kHz

8.0

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Revision:20170701-P1

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