MMDT1901DW...MMDT1909DW-AH
Dual NPN Silicon Epitaxial Planar Digital Transistors
For switching and interface circuit and drive circuit applications
6
5
4
Features
• AEC-Q101 Qualified
TR2
TR1
• Transistors with built-in bias resistors R1 and R2
• Simplification of circuit design
1
2
3
• Reduces number of components and board space
TR1: 1. Emitter 2. Base 6. Collector
TR2: 4. Emitter 5. Base 3. Collector
SOT-363 Plastic Package
• Halogen and Antimony Free(HAF), RoHS compliant
Resistor Values
Type
R1 (KΩ)
4.7
10
R2 (KΩ)
4.7
10
MMDT1901DW
MMDT1902DW
MMDT1903DW
MMDT1904DW
MMDT1905DW
MMDT1906DW
MMDT1907DW
MMDT1908DW
MMDT1909DW
22
22
47
47
2.2
4.7
10
47
47
47
22
47
47
22
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Value
50
Unit
V
Collector Base Voltage
Collector Emitter Voltage
VCBO
VCEO
50
V
MMDT1901DW~1904DW
MMDT1905DW~1906DW
MMDT1907DW
10
5
6
Emitter Base Voltage
VEBO
V
7
MMDT1908DW
15
MMDT1909DW
Collector Current
IC
Ptot
Tj
100
200
mA
Total Power Dissipation
Junction Temperature
mW
150
Storage Temperature Range
Tstg
- 55 to + 150
Thermal Characteristics
Parameter
Thermal Resistance from Junction to Ambient 1)
Symbol
RθJA
Max.
625
Unit
/W
1) Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
®
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Dated:28/04/2022 Rev:02