Datasheet > MMDL914T1

MMDL914T1

更新时间： 2024-02-16 09:32:28

品牌	Logo	应用领域
乐山 - LRC		二极管开关光电二极管
页数	文件大小	规格书
3页	109K
描述
High-Speed Switching Diode

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中文翻译

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技术参数
数据手册

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MMDL914T1 技术参数

是否无铅：	含铅	生命周期：	Contact Manufacturer
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.74
Is Samacsys：	N	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

MMDL914T1 数据手册

LESHAN RADIO COMPANY, LTD.

High –Speed Switching Diode

MMDL914T1

CATHODE

ANODE

CASE 477– 02, STYLE 1

SOD– 323

MAXIMUM RATINGS

Rating

Symbol

Value

100

Unit

Reverse Voltage

Vdc

Forward Current

I _F

200

mAdc

Peak Forward Surge Current

I_FM(surge)

500

THERMALCHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,*

T _A= 25°C

P_D

200

Derate above 25°C

1.57

635

150

mW/°C

°C/W

°C

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

R _θJA

T _J, T _stg

**FR-4 Minimum Pad

DEVICE MARKING

MMDL914T1 = 5D

ELECTRICAL CHARACTERISTICS (T _A= 25°C unless otherwise noted)

Characteristic

Symbol Min

Max

Unit

OFFCHARACTERISTICS

Reverse Breakdown Voltage

(I _R= 100 µAdc)

V _(BR)

I_R

100

—

Vdc

Reverse Voltage Leakage Current

(V _R= 20Vdc)

—

nAdc

(V _R= 75Vdc)

5.0

µAdc

Diode Voltage

C _T

—

4.0

1.0

4.0

Vdc

(V _R=0, f =1.0MHz )

Forward Voltage

(I _F= 10 mAdc)

Reverse Recovery Time

(I _F= I _R= 10 mAdc ) (Figure 1)

t _rr

S5–1/3

12 3

中文翻译

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