Datasheet > MMDL770

MMDL770

更新时间： 2024-02-17 22:49:14

品牌	Logo	应用领域
ETL		肖特基二极管
页数	文件大小	规格书
3页	106K
描述
Schottky Barrier Diode

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中文翻译

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技术参数
数据手册

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MMDL770 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.83	二极管类型：	RECTIFIER DIODE

MMDL770 数据手册

Schottky Barrier Diode

Schottky barrier diodes are designed primarily for high–efficiency

UHF and VHF detector applications. Readily available to many other fast

switching RF and digital applications.

MMDL770T1

• Extremely Low Minority Carrier Lifetime

• Very Low Capacitance — 1.0 pF @ 20 V

• Low Reverse Leakage — 200 nA (max)

• High Reverse Voltage — 70 Volts (min)

• Available in 8 mm Tape and Reel

1.0 pF SCHOTTKY

BARRIER DIODE

• Device Marking: 5H

CATHODE

ANODE

PLASTIC SOD– 323

CASE 477

MAXIMUM RATINGS

Symbol

Rating

Reverse Voltage

Value

Unit

Vdc

THERMAL CHARACTERISTICS

Symbol

Characteristic

Total Device Dissipation FR–5 Board,*

Max

Unit

P _D

200

T _A= 25°C

Derate above 25°C

1.57

635

mW/°C

°C/W

R _θJA

Thermal Resistance Junction to Ambient

Junction and Storage

T _J, T _stg

–55 to+150

°C

Temperature Range

*FR–5 Minimum Pad

ORDERING INFORMATION

Device

Package

Shipping

3000 / Tape & Reel

MMDL770T1

SOD–323

ELECTRICAL CHARACTERISTICS (T _A= 25°C unless otherwise noted)

Characteristic

Reverse Breakdown Voltage

(I _R= 10 µA)

Symbol

Min

Typ

Max

Unit

V _(BR)R

—

Volts

Diode Capacitance

(V _R= 20 Volts, f = 1.0 MHz)

Reverse Leakage

(V _R= 35 V)

C _T

I _R

—

0.5

9.0

1.0

200

nAdc

Forward Voltage

(I F = 1.0 mAdc)

—

0.7

1.0

Vdc

(I F = 10 mA)

S4–1/3

12 3

中文翻译

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与MMDL770相关器件

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