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MMBZ5265BLT1 PDF预览

MMBZ5265BLT1

更新时间: 2024-11-07 23:02:47
品牌 Logo 应用领域
乐山 - LRC 半导体二极管测试
页数 文件大小 规格书
5页 166K
描述
SEMICONDUCTOR

MMBZ5265BLT1 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.26Is Samacsys:N
配置:SINGLE二极管类型:ZENER DIODE
元件数量:1最高工作温度:150 °C
最大功率耗散:0.3 W标称参考电压:62 V
子类别:Voltage Reference Diodes表面贴装:YES
最大电压容差:5%工作测试电流:2 mA
Base Number Matches:1

MMBZ5265BLT1 数据手册

 浏览型号MMBZ5265BLT1的Datasheet PDF文件第2页浏览型号MMBZ5265BLT1的Datasheet PDF文件第3页浏览型号MMBZ5265BLT1的Datasheet PDF文件第4页浏览型号MMBZ5265BLT1的Datasheet PDF文件第5页 
LESHAN RADIO COMPANY, LTD.  
SEMICONDUCTOR  
TECHNICAL DATA  
MMBZ5221BLT1  
SERIES  
225 mW SOT-23  
225mW  
Zener Voltage Regulator Diodes  
GENERAL DATA APPLICABLE TO ALL  
SERIES IN THIS GROUP  
SOT-23  
3
1
Cathode  
Anode  
Zener Voltage  
Regulator Diodes  
3
1
2
MAXIMUM CASE TEMPERATURE FOR SOLDERING  
CASE 318–07, STYLE 8  
SOT– 23 (TO–236AB)  
PLASTIC  
PURPOSES: 260°C for 10 seconds  
THERMALCHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR-5 Board*  
TA = 25°C  
PD  
225  
mW  
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance Junction to Ambient  
Total Device Dissipation  
R θJA  
PD  
Alumina Substrate,** TA = 25°C  
Derate above 25°C  
2.4  
417  
150  
mW/°C  
°C/W  
°C  
Thermal Resistance Junction to Ambient  
Junction and Storage Temeprature  
**FR-5 = 1.0 x 0.75 x 0.62 in.  
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
R θJA  
TJ , Tstg  
J1–1/5  

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