Datasheet > MMBZ5250B

MMBZ5250B

更新时间： 2024-10-29 12:33:07

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
3页	233K
描述
Planar Die Construction

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中文翻译

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数据手册

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MMBZ5250B 数据手册

Product specification

MMBZ5250B

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Planar Die Construction

General Purpose, Medium Current

Ideally Suited for Automated Assembly Processes

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^F

Rating

0.9

Unit

Forward Voltage

@ I^F= 10mA

Power Dissipation *1

P^d

350

Thermal Resistance, Junction to Ambient Air *1

Operating and Storage Temperature Range

357

T^j, T^STG

-65 to +150

*1. Part mounted on FR-4 PC board with recommended pad layout

Electrical Characteristics @TA=25 unless otherwise specified

Maximum ZenerImpedance

Maximum Reverse

Leakage Current *1

Zener Voltage Range *1

Type Number

Z^ZK@ I^ZK=

Z^ZT@ I^ZT

Vz @I^ZT

IZT

I^R

@ V^R

0.25mA

Nom (V)

Min (V)

Max (V)

6.2

MMBZ5250B

600

0.1

*1. Short duration test pulse used to minimize self-heating effect.

*2. f = 1KHz.

Marking

KJ5

http://www.twtysemi.com

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sales@twtysemi.com

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中文翻译

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