MMBZ5221BW~MMBZ5259BW
SILICON PLANAR ZENER DIODES
3
1
2
1. Anode 3. Cathode
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
PD
Value
200
Unit
mW
Power Dissipation
O
C
Operating Junction and Storage Temperature Range
Tj ,TS
- 65 to + 150
O
Characteristics ( Ta = 25 C unless otherwise noted, VF < 0.9 V at IF = 10 mA)
Zener Voltage Range 1)
Dynamic Resistance
Reverse Leakage Current
Marking
Code
Type
VZnom
lZT for
mA
VZT
ZZT
ZZK
at IZK
IR
at VR
V
V
Max. (Ω) Max. (Ω)
mA
Max. (µA)
100
75
50
25
15
10
5
V
1
MMBZ5221BW
MMBZ5223BW
MMBZ5225BW
MMBZ5226BW
MMBZ5227BW
MMBZ5228BW
MMBZ5229BW
MMBZ5230BW
MMBZ5231BW
MMBZ5232BW
MMBZ5234BW
MMBZ5235BW
MMBZ5236BW
MMBZ5237BW
MMBZ5239BW
MMBZ5240BW
MMBZ5241BW
MMBZ5242BW
MMBZ5243BW
MMBZ5245BW
MMBZ5246BW
MMBZ5248BW
MMBZ5250BW
MMBZ5251BW
MMBZ5252BW
MMBZ5254BW
MMBZ5256BW
MMBZ5257BW
MMBZ5258BW
MMBZ5259BW
HA
HB
HC
HD
HE
HF
HH
HJ
HK
HM
HN
HP
HR
HX
HY
HZ
JA
2.4
2.7
3
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
8.5
7.8
7
2.28…2.52
2.57…2.84
2.85…3.15
3.14…3.47
3.42…3.78
3.71…4.1
30
30
30
28
24
23
22
19
17
11
7
1200
1300
1600
1600
1700
1900
2000
1900
1600
1600
1000
750
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
1
1
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
1
1
1
4.09…4.52
4.47…4.94
4.85…5.36
5.32…5.88
5.89…6.51
6.46…7.14
7.13…7.88
7.79…8.61
8.65…9.56
9.5…10.5
1
5
2
5
2
5
3
5
4
5
3
5
6
500
3
6
8
500
3
6.5
7
10
17
22
30
13
16
17
21
25
29
33
41
49
58
70
80
600
3
600
3
8
10.45…11.55
11.4…12.6
12.35…13.65
14.25…15.75
15.2…16.8
17.1…18.9
19…21
600
2
8.4
9.1
9.9
11
12
14
15
17
18
21
23
25
27
30
JB
600
1
JC
JD
JE
600
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
600
600
JF
600
JH
JJ
6.2
5.6
5.2
5
600
20.9…23.1
22.8…25.2
25.65…28.35
28.5…31.5
31.35…34.65
34.2…37.8
37.05…40.95
600
JK
600
JM
JN
JP
600
4.2
3.8
3.4
3.2
600
700
JR
700
JX
800
1) Tested with pulses tp = 20 ms.
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05