Datasheet > MMBZ5235BW

MMBZ5235BW

更新时间： 2024-11-16 12:32:59

品牌	Logo	应用领域
TYSEMI		二极管测试
页数	文件大小	规格书
3页	192K
描述
Planar Die Construction

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中文翻译

获取价格

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MMBZ5235BW 数据手册

Product specification

MMBZ5235BW

Features

Planar Die Construction

General Purpose, Medium Current

Ideally Suited for Automated Assembly Processes

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^F

Rating

0.9

Unit

Forward Voltage

@ I^F= 10mA

Power Dissipation *1

P^d

200

Thermal Resistance, Junction to Ambient Air *1

Operating and Storage Temperature Range

625

T^j, T^STG

-65 to +150

*1. Part mounted on FR-4 PC board with recommended pad layout

Electrical Characteristics @TA=25 unless otherwise specified

Maximum ZenerImpedance

Maximum Reverse

Leakage Current *1

Zener Voltage Range *1

Type Number

Z^ZK@ I^ZK=

Z^ZT@ I^ZT

Vz @I^ZT

I^ZT

I^R

@ V^R

0.25mA

Nom (V)

6.8

Min (V)

6.46

Max (V)

7.14

MMBZ5235BW

750

*1. Short duration test pulse used to minimize self-heating effect.

*2. f = 1KHz.

Marking

KE5

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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