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MMBZ5230BLT1 PDF预览

MMBZ5230BLT1

更新时间： 2024-02-20 22:34:23
品牌 Logo 应用领域
安森美 - ONSEMI 稳压器二极管齐纳二极管测试光电二极管
页数 文件大小 规格书
6页 76K
描述
Zener Voltage Regulators

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中文翻译

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MMBZ5230BLT1 技术参数

是否Rohs认证： 不符合生命周期：Contact Manufacturer
包装说明：PLASTIC PACKAGE-3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.25Is Samacsys：N
配置：SINGLE二极管元件材料：SILICON
二极管类型：ZENER DIODE最大动态阻抗：19 Ω
JESD-30 代码：R-PDSO-G3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性：UNIDIRECTIONAL
最大功率耗散：0.225 W标称参考电压：4.7 V
子类别：Voltage Reference Diodes表面贴装：YES
技术：ZENER端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
最大电压容差：5.11%工作测试电流：20 mA
Base Number Matches：1

MMBZ5230BLT1 数据手册

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MMBZ5221BLT1 Series  
Preferred Device  
Zener Voltage Regulators  
225 mW SOT−23 Surface Mount  
This series of Zener diodes is offered in the convenient, surface  
mount plastic SOT−23 package. These devices are designed to provide  
voltage regulation with minimum space requirement. They are well  
suited for applications such as cellular phones, hand held portables,  
and high density PC boards.  
http://onsemi.com  
Features  
3
1
• Pb−Free Packages are Available  
Cathode  
Anode  
• 225 mW Rating on FR−4 or FR−5 Board  
• Zener Voltage Range − 2.4 V to 91 V  
• Package Designed for Optimal Automated Board Assembly  
• Small Package Size for High Density Applications  
• ESD Rating of Class 3 (>16 KV) per Human Body Model  
MARKING  
DIAGRAM  
3
SOT−23  
CASE 318  
STYLE 8  
xxx  
Mechanical Characteristics  
1
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
2
xxx = Specific Device Code  
= Date Code  
M
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
ORDERING INFORMATION  
†
MAXIMUM RATINGS  
Device**  
MMBZ52xxBLT1  
Package  
Shipping  
Rating  
Symbol  
Max  
Unit  
SOT−23  
3000/Tape & Reel  
3000/Tape & Reel  
Total Power Dissipation on FR−5 Board,  
P
D
MMBZ52xxBLT1G SOT−23  
(Pb−Free)  
(Note 1) @ T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derated above 25°C  
MMBZ52xxBLT3  
SOT−23 10,000/Tape & Reel  
Thermal Resistance,  
Junction−to−Ambient  
R
556  
°C/W  
q
JA  
MMBZ52xxBLT3G SOT−23 10,000/Tape & Reel  
(Pb−Free)  
Total Power Dissipation on Alumina  
P
D
Substrate, (Note 2) @ T = 25°C  
Derated above 25°C  
300  
2.4  
mW  
mW/°C  
A
**The “T1” suffix refers to an 8 mm, 7 inch reel.  
The “T3” suffix refers to an 8 mm, 13 inch reel.  
Thermal Resistance,  
Junction−to−Ambient  
R
417  
°C/W  
°C  
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Junction and Storage  
Temperature Range  
T , T  
J
−65 to +150  
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 3 of  
this data sheet.  
1. FR−5 = 1.0 X 0.75 X 0.62 in.  
2. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.  
Devices listed in bold, italic are ON Semiconductor  
Preferred devices. Preferred devices are recommended  
choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 5  
MMBZ5221BLT1/D  
 
123456

中文翻译

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MMBZ5230BLT1 替代型号

型号 品牌 替代类型 描述 数据表
MMBZ5230ELT1G ONSEMI

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 暂无描述
MMBZ5230BLT1G ONSEMI

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