Datasheet > MMBTSC3928

MMBTSC3928

更新时间： 2024-09-23 05:49:23

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	212K
描述
NPN Silicon Epitaxial Planar Transistor

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MMBTSC3928 数据手册

MMBTSC3928

NPN Silicon Epitaxial Planar Transistor

for low frequency amplification applications

The transistor is subdivided into four groups Q, R,

S and T, according to its DC current gain.

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

200

Collector Current

Power Dissipation

P_tot

200

Junction Temperature

Storage Temperature Range

T_j

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Symbol

Min.

Typ.

Max.

Unit

Parameter

DC Current Gain

at V_CE= 6 V, I_C= 1 mA

Current Gain Group

h_FE

120

180

270

390

270

390

560

820

at V_CE= 6 V, I_C= 0.1 mA

Collector Base Breakdown Voltage

at I_C= 100 µA

Collector Emitter Breakdown Voltage

at I_C= 100 µA

Emitter Base Breakdown Voltage

at I_C= 100 µA

Collector Cutoff Current

at V_CB= 50 V

Emitter Cutoff Current

at V_EB= 4 V

Collector Emitter Saturation Voltage

at I_C= 100 mA, I_B= 10 mA

Gain Bandwidth Product

at V_CE= 6 V, -I_E= 10 mA

Collector Output Capacitance

at V_CB= 6 V, f = 1 MHz

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

0.1

0.3

µA

I_EBO

V_CE(sat)

f_T

200

MHz

C_ob

Noise Figure

at V_CE= 6 V, -I_E= 0.1 mA, f = 1 KHz, R_G= 2 KΩ

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 05/08/2006

中文翻译

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